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Christian Miersch
Observed name:
C. Miersch
Institution:
Fraunhofer Institute for Integrated Systems and Device Technology
Observed institutions:
Technologiezentrum Halbleitermaterialien,
Fraunhofer Institute for Integrated Systems and Device Technology,
TU Bergakademie Freiberg
ORCID:
0009-0006-7534-6649
Observed ORCID:
0009-0006-7534-6649
OpenAlex ID:
A5021242401
AlGaN/GaN MISHEMTs with epitaxially grown GdScO3 as high- κ dielectric
2021
·
Sarah Seidel
, Alexander Schmid
, et al.
·
Applied Physics Letters
·
10
Morphological and electrical characterization of gate recessed AlGaN/GaN high electron mobility transistor device by purge-free atomic layer etching
2024
·
Christian Miersch
, Sarah Seidel
, et al.
·
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
·
9
PDF
Impact of Surface Treatment on Noise in PL Measurements of Silicon Vacancies in 4H-SiC Lateral PIN-Diodes
2026
·
Jannik H. Schwarberg
, Fabian Magerl
, et al.
·
Nano Letters
·
2
PDF
On the way to more sustainability: Development of five Al0.25Ga0.75N atomic layer etching modes for shorter cycle times
2025
·
Christian Miersch
, Sarah Seidel
, et al.
·
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
·
2
Solid-State pH Sensors for Mine Water Monitoring
2020
·
Frederic Güth
, Franz Selbmann
, et al.
·
ECS Meeting Abstracts
·
2
Atomic Layer Etching of GaN and AlGaN Using CH4/H2, H2 and HCl Chemistry
2023
·
Marco Radehaus
, Stephan Wege
, et al.
·
ECS Meeting Abstracts
·
1
Applying atomic layer etching for enhanced SiC-based photonic devices
2026
·
M. Siebert
, T. Bi
, et al.
·
Integrated Photonics Platforms
Impact of Inhomogeneous Offcut Angles of GaN Native Substrates on Lateral Current Modulation in AlGaN Barrier Layers
2025
·
Sepideh Faraji
, Elke Meissner
, et al.
·
Crystal Research and Technology
PDF
Morphological and Electrical Characterization of AlGaN/GaN Heterostructures Modified By Atomic Layer Etching
2023
·
Christian Miersch
, Stephan Wege
, et al.
·
ECS Meeting Abstracts
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Works count:
9
Citation count:
26
H-index:
2
I10-index:
1
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