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Linyuan Liao
Institution:
Hunan University of Technology
Observed institutions:
Hunan University,
Hunan University of Technology
ORCID:
0009-0009-6947-4929
Observed ORCID:
0009-0009-6947-4929
OpenAlex ID:
A5021255603
A New Proportional Base Drive Technique for SiC Bipolar Junction Transistor
2016
·
Linyuan Liao
, Jun Wang
, et al.
·
IEEE Transactions on Power Electronics
·
17
A new proportional base driver technique for SiC bipolar juction transistor
2015
·
Linyuan Liao
, Sai Tang
, et al.
·
IEEE Energy Conversion Congress and Exposition (ECCE)
·
2
A Si-SiC Darlington Transistor Pair With Low Consumption
2024
·
Linyuan Liao
, Zhenhui Wu
, et al.
·
IEEE Transactions on Power Electronics
·
1
A Float P-Drift and Blocking Junction LIGBT With Low Turn-Off Loss and No-Snapback
2024
·
Rongzhou Zeng
, Zhenhui Wu
, et al.
·
IEEE Access
·
1
Switching Controllability for SiC JFET/Si IGBT Cascode With External Absorption and Boost Capacitors
2025
·
Zhenhui Wu
, Rongzhou Zeng
, et al.
·
IEEE Journal of Emerging and Selected Topics in Power Electronics
Numerical Analysis of a Low Switching Loss and Snapback-Free Ligbt with Trench Gate and Blocking Junction
2023
·
Zhenhui Wu
, Rongzhou Zeng
, et al.
·
SSRN Electronic Journal
An insulated gate bipolar transistor with surface n-type barrier
2015
·
Mengxuan Jiang
, Z. John Shen
, et al.
·
Journal of Semiconductors
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Works count:
7
Citation count:
21
H-index:
2
I10-index:
1
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