Get started
Author

Huazhuo Liang

The influence of concentration of hydroxyl radical on the chemical mechanical polishing of SiC wafer based on the Fenton reaction
2017 · Jiabin Lu, Run Chen, et al. · Precision Engineering · 133
Material removal process of single-crystal SiC in chemical-magnetorheological compound finishing
2017 · Huazhuo Liang, Jiabin Lu, et al. · The International Journal of Advanced Manufacturing Technology · 60
Material removal mechanisms in chemical-magnetorheological compound finishing
2019 · Huazhuo Liang, Qiusheng Yan, et al. · The International Journal of Advanced Manufacturing Technology · 43
Investigation of the microhole arrays generated by masked jet electrochemical machining with polyaluminum chloride electrolyte
2023 · Junfeng He, Zan Wang, et al. · Precision Engineering · 23
Catalysts based on Fenton reaction for SiC wafer in chemical magnetorheological finishing
2018 · Huazhuo Liang, Jiabin Lu, et al. · AIMS Materials Science · 14
Back Propagation Neural Network-Based Predictive Model for Magnetorheological–Chemical Polishing of Silicon Carbide
2025 · Huazhuo Liang, Wenjie Chen, et al. · Micromachines · 8
Pityriasis versicolor in the paediatric age group: a descriptive observational study of 415 children
2025 · Zhuodi Luo, Xiaowei Li, et al. · Archives of Dermatological Research · 5
Surface oxidation properties of GaN wafers in chemical magnetorheological polishing process by ultrasonic action
2025 · Huazhuo Liang, Wenjie Chen, et al. · Precision Engineering · 4
Chemical catalysts of Fenton reaction for single-crystal SiC based on nanoindentation
2018 · Huazhuo Liang, Jiabin Lu, et al. · International Journal of Abrasive Technology · 2
Works count: 9
Citation count: 292
H-index: 6
I10-index: 5
Year
Topic
Type