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A. Souifi

Observed names: A Souifi, A. K. Souifi, A. SOUIFI, A., Souifi, Abdelkader Souifi, Abdelkader, Souifi, SOUIFI, Abdelkader, Souifi A, Souifi Abdelkader, Souifi, A, Souifi, A., Souifi, Abdelkader
Observed institutions: Lyon 1 Université, École Centrale de Lyon, Centre National de la Recherche Scientifique, Université de Sherbrooke, University of Monastir, Forschungszentrum Jülich, Université de Lyon, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Idaho National Laboratory, Institut des Nanotechnologies de Lyon, CEA Grenoble, STMicroelectronics (France), Laboratoire des Technologies de la Microélectronique, International Iberian Nanotechnology Laboratory, Laboratoire Ampère, Laboratoire d'Électronique des Technologies de l'Information, Laboratoire Nanotechnologies et Nanosystèmes, Institut interdisciplinaire d'innovation technologique, Institut National des Sciences Appliquées de Lyon, École d'Ingénieurs en Chimie et Sciences du Numérique, Université Grenoble Alpes
ORCID: 0000-0001-7616-6873
Observed ORCID: 0000-0001-7616-6873
OpenAlex ID: A5021444626
Excitonic photoluminescence from Si-capped strained Si1−x Gex layers
1991 · D. Dutartre, G. Brémond, et al. · Physical review. B, Condensed matter · 112
Electrical study of Ge-nanocrystal-based metal-oxide-semiconductor structures for p-type nonvolatile memory applications
2004 · M. Kanoun, A. Souifi, et al. · Applied Physics Letters · 110
Atomic force microscopy nanomanipulation of silicon nanocrystals for nanodevice fabrication
2003 · Sébastien Decossas, Frédéric Mazen, et al. · Nanotechnology · 77
Electronic properties of Ge nanocrystals for non volatile memory applications
2006 · M. Kanoun, C. Busseret, et al. · Solid-State Electronics · 75
Optical properties of silicon nanocrystal LEDs
2003 · J. De La Torre, A. Souifi, et al. · Physica E Low-dimensional Systems and Nanostructures · 69
pH driven addressing of silicon nanowires onto Si3N4/SiO2micro-patterned surfaces
2016 · Jean-Pierre Cloarec, Céline Chevalier, et al. · Nanotechnology · 62
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Optical and electrical properties of Si-nanocrystals ion beam synthesized in SiO2
2003 · B. Garrido, M. López, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 60
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Study of trapping phenomenon in 4H-SiC MESFETs: dependence on substrate purity
2003 · N. Sghaier, J. Bluet, et al. · IEEE Transactions on Electron Devices · 47
Electrical and optical characterisation of vanadium in 4H and 6H–SiC
1999 · V Lauer, G Brémond, et al. · Materials Science and Engineering B · 47
Discharge mechanisms modeling in LPCVD silicon nanocrystals usingC–Vand capacitance transient techniques†
2000 · C. Busseret, A. Souifi, et al. · Superlattices and Microstructures · 45
Low pressure chemical vapor deposition growth of silicon quantum dots on insulator for nanoelectronics devices
2000 · T. Baron, F. Martin, et al. · Applied Surface Science · 44
Effect of annealing time on the performance of tin oxide thin films ultraviolet photodetectors
2016 · Rechem Djamil, Khial Aicha, et al. · Thin Solid Films · 43
Nucleation control of CVD growth silicon nanocrystals for quantum devices
2002 · T. Baron, F. Mazen, et al. · Microelectronic Engineering · 43
Photoluminescence and electrical characterization of SiGe/Si heterostructures grown by rapid thermal chemical vapour deposition
1992 · G. Bremond, A. Souifi, et al. · Thin Solid Films · 37
Effect of interface traps for ultra-thin high-k gate dielectric based MIS devices on the capacitance-voltage characteristics
2017 · Slah Hlali, Neila Hizem, et al. · Microelectronics Reliability · 36
Optimized Pre-Treatment Process for MOS-GaN Devices Passivation
2014 · Ahmed Chakroun, Hassan Maher, et al. · IEEE Electron Device Letters · 36
Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates
2005 · N. Sghaier, M. Trabelsi, et al. · Microelectronics Journal · 31
Novel integration process and performances analysis of Low STandby Power (LSTP) 3D multi-channel CMOSFET (MCFET) on SOI with metal / high-K gate stack
2008 · E. Bernard, T. Ernst, et al. · Symposium on VLSI Technology · 30
Characterization of Si1−xGex/Si (100) heterostructures by photoluminescence and admittance spectroscopy
1992 · A. Souifi, G. Brémond, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 30
High temperature and voltage dependent electrical and dielectric properties of TiN/Al2O3/p-Si MIS structure
2017 · Slah Hlali, Abdelaali Farji, et al. · Journal of Alloys and Compounds · 26
Analysis of photogenerated random telegraph signal in single electron detector (photo-SET)
2009 · M. Troudi, Na. Sghaier, et al. · Optics Express · 26
New aspects and mechanism of kink effect in InAlAs/InGaAs/InP inverted HFETs
1998 · B. Georgescu, M.A. Py, et al. · IEEE Electron Device Letters · 26
Ion-induced tracks in amorphous Si3N4 films
2008 · B. Canut, A. Ayari, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 25
Retention in metal–oxide–semiconductor structures with two embedded self-aligned Ge-nanocrystal layers
2007 · S Duguay, S Burignat, et al. · Semiconductor Science and Technology · 24
Lateral confinement by low pressure chemical vapor deposition-based selective epitaxial growth of Si1−xGex/Si nanostructures
1997 · L. Vescan, C. Dieker, et al. · Journal of Applied Physics · 24
Works count: 254
Citation count: 2,069
H-index: 24
I10-index: 52
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