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Kazuaki Kurihara
Observed names:
K. Kurihara,
栗原和明
Institution:
KIOXIA Corporation (Japan)
Observed institutions:
University of Fukui,
KIOXIA Corporation (Japan)
ORCID:
0009-0002-7023-8009
Observed ORCID:
0009-0002-7023-8009
OpenAlex ID:
A5021755207
In situ analysis of SiO2 films etched under cryogenic conditions using H2/F2/Ar gas mixture plasma
2026
·
Yuma Kato
, Junji Kataoka
, et al.
·
Applied Physics Letters
·
4
Infinite selectivity in dry etching process for high-aspect-ratio hole using C7HF7 gas plasma
2025
·
Junji Kataoka
, Norikatsu Sasao
, et al.
·
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
·
2
Investigation of surface reactions of etched SiN films using HF/PF3 gas mixture plasma under cryogenic conditions via in-line XPS: The role of ammonium salts in etch rate enhancement
2026
·
Junji Kataoka
, Yuma Kato
, et al.
·
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
·
1
Metal-supported Laser-induced Breakdown Spectroscopy for the Trace Elemental Identification of Material
2022
·
A. Khumaeni
, W. S. Budi
, et al.
·
RASAYAN Journal of Chemistry
PDF
Dry Process FOREWORD
2020
·
白藤 立
, Tatsuru Shirafuji
, et al.
·
Institutional Repositories DataBase (IRDB)
Epitaxial Growth of Oxide Thin Films on Si Substrate by Introducing Buffer Layers and Their Applications
2007
·
篠崎 和夫
, Kazuo Shinozaki
, et al.
·
Institutional Repositories DataBase (IRDB)
Fabrication and Optical Properties of Pb(Mg_1/3_Nb_2/3_)O_3_-PbTiO_3_ Thin Films on Si Substrates by PLD Method
2007
·
篠崎 和夫
, Kazuo Shinozaki
, et al.
·
Institutional Repositories DataBase (IRDB)
Growth of Epitaxial Thin Film on Si Substrate by Introducing Buffer Layers
2005
·
篠崎 和夫
, Kazuo Shinozaki
, et al.
·
Institutional Repositories DataBase (IRDB)
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Works count:
10
Citation count:
7
H-index:
2
I10-index:
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