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Aditya K. Bhat

Observed name: Aditya Kundapura Bhat
Observed institution: University of Bristol
ORCID: 0009-0007-8328-7738
Observed ORCID: 0009-0007-8328-7738
OpenAlex ID: A5021811147
Turn-On Voltage Instability of β-Ga2O3 Trench Schottky Barrier Diodes With Different Fin Channel Orientations
2024 · Hyun-Seop Kim, Aditya K. Bhat, et al. · IEEE Transactions on Electron Devices · 24
Breakdown-induced directional cracking in kilovolt-class β -Ga2O3 (001) vertical trench Schottky barrier diodes
2025 · Sai Charan Vanjari, Aditya K. Bhat, et al. · Applied Physics Letters · 14
Analysis of interface trap induced ledge in β-Ga2O3 based MOS structures using UV-assisted capacitance–voltage measurements
2024 · Aditya K. Bhat, Hyun-Seop Kim, et al. · Journal of Applied Physics · 13
Degradation of on-current in 4 kV β-Ga2O3 trench Schottky barrier diodes under high voltage step stressing
2025 · Aditya K. Bhat, Sai Charan Vanjari, et al. · Applied Physics Letters · 11
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Low On-Resistance and High Carrier Mobility in β-Ga2O3 Single-Crystal Substrates through Tantalum Doping
2024 · Ananthu Vijayan V L, Sai Charan Vanjari, et al. · ACS Applied Electronic Materials · 6
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Vertical GaN-on-GaN finFETs: Effect of SiN$_{x}$ Spacer Layer on Breakdown Voltage and Device Stability Under Gate Bias Stress
2026 · Chengzhi Zhang, Aditya K. Bhat, et al. · IEEE Transactions on Electron Devices · 2
Double drift layers to minimize on-resistance in 2.7-kV β -Ga2O3 (001) vertical trench Schottky barrier diodes
2026 · Sai Charan Vanjari, Aditya K. Bhat, et al. · Applied Physics Letters · 2
Modelling of impedance dispersion in lateral β-Ga2O3 MOSFETs due to parallel conductive Si-accumulation layer
2023 · Zequan Chen, Abhishek Mishra, et al. · Applied Physics Express · 2
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Mitigating Plasma Etch-Induced Negative Charge Trapping in 2.7 kV β-Ga 2 O 3 (001) Trench Schottky Barrier Diodes Using H 3 PO 4 Treatment
2026 · Min-Yeong Kim, Aditya Kundapura Bhat, et al. · ACS Applied Electronic Materials · 1
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Extraction of Sub-Threshold Mobility in Ga2O3 Lateral Transistors From AC Conductance
2023 · Abhishek Mishra, Michael J. Uren, et al. · IEEE Electron Device Letters · 1
Vertical GaN Schottky barrier diodes: Impact of device dimensions and micro-masking on mesa edge termination
2026 · Mritunjay Kumar, Chengzhi Zhang, et al. · Applied Physics Letters
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Opportunities for Wide and Ultrawide Bandgap Devices with Heterogenous Integration
2025 · Vanjari Sai Charan, Aditya K. Bhat, et al. · IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
Works count: 12
Citation count: 76
H-index: 5
I10-index: 4
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