Author

M. Kachouane

Institution: University of Sciences and Technology Houari Boumediene

Observed institution: University of Sciences and Technology Houari Boumediene

OpenAlex ID: A5021869874

Channel length impact on radiation-induced threshold voltage shift in N-MOSFET devices at low gamma rays radiation doses

2003 · B. Djezzar, A. Smatti, et al. · IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC) · 2

Electrical characterization of oxide and Si/SiO/sub 2/ interface of irradiated NMOS transistors at low radiation doses

2002 · B. Djezzar, A. Amrouche, et al. · IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC) · 1

Works count: 2

Citation count: 3

H-index: 1

I10-index: