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T. Paskova

Observed names: P P Paskov, P Pascov Plamen, P. P Paskov, P. P. Paskov, P. Paskov, P.P Paskov, P.P. Paskov, Paskov, P.P., Paskov, Plamen, Paskov, Plamen P., Paskova, T., Plamen P. Paskov, Plamen PASKOV, Plamen Paskov, T Paskova, Tania Paskova, Tanya Paskova
Observed institutions: Linköping University, Centre National de la Recherche Scientifique, Russian Academy of Sciences, North Carolina State University, University of Iceland, University of Bremen, Université de Montpellier, Kyma Technologies (United States), Institute of Electronics, Université Montpellier 2, Sofia University "St. Kliment Ohridski", Ioffe Institute
ORCID: 0000-0003-2602-1523
Observed ORCIDs: 0000-0003-2602-1523, 0000-0003-0011-6161
OpenAlex ID: A5021946890
Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition
2005 · P. P. Paskov, R. Schifano, et al. · Journal of Applied Physics · 196
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
2004 · B. Arnaudov, T. Paskova, et al. · Physical Review B · 187
Recombination of free and bound excitons in GaN
2008 · B. Monemar, P. P. Paskov, et al. · physica status solidi (b) · 136
Evidence for Two Mg Related Acceptors in GaN
2009 · B. Monemar, P. P. Paskov, et al. · Physical Review Letters · 131
Anisotropic thermal conductivity of β-Ga2O3 at elevated temperatures: Effect of Sn and Fe dopants
2017 · M. Slomski, N. Blumenschein, et al. · Journal of Applied Physics · 117
Anisotropic strain and phonon deformation potentials in GaN
2007 · V. Darakchieva, T. Paskova, et al. · Physical Review B · 113
Optical properties of InN—the bandgap question
2005 · B. Monemar, P.P. Paskov, et al. · Superlattices and Microstructures · 108
Photoluminescence up-conversion in InAs/GaAs self-assembled quantum dots
2000 · P. P. Paskov, P. O. Holtz, et al. · Applied Physics Letters · 99
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Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
2006 · C. Roder, S. Einfeldt, et al. · Journal of Applied Physics · 74
Refractive indices of InSb, InAs, GaSb, InAsxSb1−x, and In1−xGaxSb: Effects of free carriers
1997 · P. P. Paskov · Journal of Applied Physics · 73
Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers
2005 · T. Paskova, V. Darakchieva, et al. · Journal of Crystal Growth · 71
Properties of the main Mg-related acceptors in GaN from optical and structural studies
2014 · B. Monemar, P. P. Paskov, et al. · Journal of Applied Physics · 61
Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures – theory and experiment
2017 · P. P. Paskov, M. Slomski, et al. · AIP Advances · 58
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Deformation potentials of the E1(TO) and E2 modes of InN
2004 · V. Darakchieva, P. P. Paskov, et al. · Applied Physics Letters · 54
Recent developments in the III‐nitride materials
2007 · B. Monemar, P. P. Paskov, et al. · physica status solidi (b) · 52
Epitaxial growth of β-Ga2O3 by hot-wall MOCVD
2022 · Daniela Gogova, Misagh Ghezellou, et al. · AIP Advances · 49
Polarized photoluminescence study of free and bound excitons in free-standing GaN
2004 · P. P. Paskov, T. Paskova, et al. · Physical Review B · 44
Phonon mode behavior in strained wurtzite AlN∕GaN superlattices
2005 · V. Darakchieva, E. Valcheva, et al. · Physical Review B · 43
Transient photoluminescence of shallow donor bound excitons in GaN
2010 · B. Monemar, P. P. Paskov, et al. · Physical Review B · 42
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Hydride vapour phase epitaxy growth and characterization of thick GaN using a vertical HVPE reactor
2006 · C. Hemmingsson, P.P. Paskov, et al. · Journal of Crystal Growth · 41
Lattice parameters of GaN layers grown on a-plane sapphire: Effect of in-plane strain anisotropy
2003 · V. Darakchieva, P. P. Paskov, et al. · Applied Physics Letters · 41
Spin-exchange splitting of excitons in GaN
2001 · P. P. Paskov, T. Paskova, et al. · Physical review. B, Condensed matter · 40
Electron band bending of polar, semipolar and non-polar GaN surfaces
2016 · I. Bartoš, O. Romanyuk, et al. · Journal of Applied Physics · 39
Hot-Wall MOCVD for High-Quality Homoepitaxy of GaN: Understanding Nucleation and Design of Growth Strategies
2022 · Rosalia Delgado Carrascon, Steffen Richter, et al. · Crystal Growth & Design · 38
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Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates
2007 · G. Pozina, P. P. Paskov, et al. · Applied Physics Letters · 37
Works count: 265
Citation count: 5,207
H-index: 36
I10-index: 130
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