Author

Elif Balkas

Observed names: Balkas, Elif, E. Balkas

Institution: Wolfspeed, Inc. (United States)

Observed institution: Wolfspeed, Inc. (United States)

ORCID: 0009-0009-7548-1906

Observed ORCID: 0009-0009-7548-1906

OpenAlex ID: A5022195209

Bulk Growth of Large Area SiC Crystals

2016 · Adrian R. Powell, Joseph J. Sumakeris, et al. · Materials science forum · 78

Hole-Induced Threshold Voltage Instability Under High Positive and Negative Gate Stress in SiC MOSFETs

2024 · Ayan K. Biswas, Daniel J. Lichtenwalner, et al. · IEEE International Reliability Physics Symposium proceedings · 13

Dislocation Characterization in 4H-SiC Crystals

2016 · Joseph J. Sumakeris, R.T. Leonard, et al. · Materials science forum · 12

From Wafers to Bits and Back again: Using Deep Learning to Accelerate the Development and Characterization of SiC

2020 · Robert Leonard, Matthew Conrad, et al. · Materials science forum · 6

Industrial and Body Diode Qualification of Gen-III Medium Voltage SiC MOSFETs: Challenges and Solutions

2019 · Edward van Brunt, Michael O’Loughlin, et al. · Materials science forum · 6

Revolutionizing Power Electronics with Silicon Carbide to Pioneer Sustainable Solutions

2024 · Elif Balkas · Technical digest - International Electron Devices Meeting/Technical digest · 5

Exploration of Bulk and Epitaxy Defects in 4H-SiC Using Large Scale Optical Characterization

2017 · R.T. Leonard, M.J. Paisley, et al. · Materials science forum · 3

Implementation of Large Scale Deep Learning Non-Destructive Methods for Characterizing 4H-SiC Materials

2023 · Robert Leonard, Matthew Conrad, et al. · Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum · 2

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Propagation mechanism of non-step-flow direction BPDs into 4H-SiC epitaxial layers and their stacking fault expansion behavior

2026 · Alecsander N. Imhof, Nadeemullah A. Mahadik, et al. · Journal of Applied Physics

Enhanced Gate Oxide Reliability in Vertical SiC Power MOSFETs via Optimized Processing and Screening

2026 · Ayan K. Biswas, Callie Woods, et al. · Key engineering materials

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Product Reliability of Commercial Vertical SiC Power MOSFETs Achieved by Optimized Screening

2026 · Ayan K. Biswas, Daniel J. Lichtenwalner, et al. · IEEE International Reliability Physics Symposium proceedings

Product Reliability of Commercial Vertical SiC Power MOSFETs achieved by Optimized Screening

2026 · IEEE International Symposium on Reliability Physics 2026, Balkas, Elif, et al. · Underline Science Inc.

Works count: 14

Citation count: 125

H-index: 5

I10-index: 3