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Atabek E. Atamuratov

Observed names: A E Atamuratov, A. Atamuratov, A. E. Atamuratov, A. É. Atamuratov, A.E. Atamuratov, Atabek Atamuratov, Atabek E. Egamberdievich Atamuratov, Atamuratov Atabek, Atamuratov, A. E., А Атамуратов, А.Э. Атамуратов
ORCID: 0000-0003-2173-3783
Observed ORCID: 0000-0003-2173-3783
OpenAlex ID: A5022351884
Photoassisted Kelvin probe force microscopy at GaN surfaces: The role of polarity
2010 · J. D. Wei, S. F. Li, et al. · Applied Physics Letters · 33
Optimization of vertically stacked nanosheet FET immune to self-heating
2023 · M. Balasubbareddy, K. Sivasankaran, et al. · Micro and Nanostructures · 17
Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries
2021 · A.E. Atamuratov, B.O. Jabbarova, et al. · Spanish Conference on Electron Devices · 8
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The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes
2021 · A. E. Atamuratov, B. O. Jabbarova, et al. · Technical Physics Letters · 7
Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes
2017 · A.E. Atamuratov, A. Abdikarimov, et al. · Nanosystems Physics Chemistry Mathematics · 7
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Combined Influence of Gate Oxide and Back Oxide Materials on Self-Heating and DIBL Effect in 2D MOS2-Based MOSFETs
2023 · Atabek E. Egamberdievich Atamuratov, Khushnudbek Sharifbaevich Saparov, et al. · Applied Sciences · 6
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Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection
2020 · Atabek E. Atamuratov, Ahmed Yusupov, et al. · Applied Sciences · 6
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The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET
2018 · A. E. Abdikarimov, A. Yusupov, et al. · Technical Physics Letters · 6
Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET
2014 · A. Abdikarimov, G. Indalecio, et al. · International Workshop on Computational Electronics · 6
Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET
2022 · A.E. Atamuratov, B.O. Jabbarova, et al. · Nanosystems Physics Chemistry Mathematics · 5
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Experimental Assessment of the Nonuniform Radiation-Induced Space-Charge Distribution in the Surface Region of Silicon
2001 · A. E. Atamuratov, A. Yusupov, et al. · Inorganic Materials · 5
Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement
2007 · A. É. Atamuratov, D. U. Matrasulov, et al. · Doklady Physics · 4
Impact of source (drain) doping profiles and channel doping level on self-heating effect in FinFET
2024 · Atabek E. Atamuratov, Bahor O. Jabbarova, et al. · Micro and Nanostructures · 3
Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET
2024 · Atabek Atamuratov, Bahor Jabbarova, et al. · International Siberian workshops and tutorials on electron devices and materials · 3
The effect of geometrical sizes on efficiency of vertical silicon tunnel junction solar cell for high solar concentration
2022 · A. E. Atamuratov, B.Q. Jumaboyev, et al. · International Conference on Information Science and Communications Technologies (ICISCT) · 3
Anomalous Behavior of Lateral C–V Characteristic of an MNOS Transistor with an Embedded Local Charge in the Nitride Layer
2019 · Z. A. Atamuratova, A. Yusupov, et al. · Technical Physics · 3
Characterising lateral capacitance of MNOSFET with localised trapped charge in nitride layer
2018 · A.E. Atamuratov, Z.A. Atamuratova, et al. · Results in Physics · 3
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A Comprehensive Study of the Impact of the Gate Oxide Material Composition on the Self-Heating Effect in Nanosheet Field Effect Transistor
2025 · A. E. Atamuratov, D. R. Rajapov, et al. · Silicon · 2
Self heating and DIBL effects in 2D MoS2 based MOSFET with different gate oxide and back oxide materials
2022 · A. E. Atamuratov, X. Sh. Saparov, et al. · International Conference on Information Science and Communications Technologies (ICISCT) · 2
Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET
2020 · Atabek E. Atamuratov, Mahkam M. Khalilloev, et al. · Applied Sciences · 2
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Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate
2017 · A.E. Atamuratov, M. Khalilloev, et al. · Nanosystems Physics Chemistry Mathematics · 2
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Influence of the field of the built-in oxide charge on the lateral C- V dependence of the MOSFET
2010 · A. É. Atamuratov, D. U. Matrasulov, et al. · Doklady Physics · 2
Data and code for: Surface-dipole contamination of the Schottky–Mott slope: why the Fermi-level pinning factor does not transfer to MXene contacts
2026 · Khalilloev, Makhkam, Atamuratov, A. E., et al. · Zenodo (CERN European Organization for Nuclear Research) · 1
First-Principles Investigation of The Electronic Properties of Monolayer MoS₂ Using DFT-Based QuantumATK Simulations
2026 · Makhkam Khalilloev, Bahor Jabbarova, et al. · East European Journal of Physics · 1
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Self-Heating Effects in Nanoscale MOSFETs
2025 · Ahmed Yusupov, Atabek Atamuratov, et al. · IntechOpen eBooks · 1
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Works count: 58
Citation count: 145
H-index: 6
I10-index: 2
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