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Author

Myeongsu Chae

Observed names: Myeong-Su Chae, Myeong‐Su Chae
Institution: Hongik University
Observed institution: Hongik University
ORCID: 0000-0002-4432-2365
Observed ORCID: 0000-0002-4432-2365
OpenAlex ID: A5022641065
P-GaN/p-AlGaN/AlGaN/GaN Heterojunction Field-Effect Transistor With a Threshold Voltage of 6 V
2024 · Dong-Guk Kim, Jun-Hyeok Yim, et al. · IEEE Electron Device Letters · 20
Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs
2024 · Myeongsu Chae, Ho-Young Cha, et al. · IEEE Journal of the Electron Devices Society · 15
Investigation of the Gate Degradation Induced by Forward Gate Voltage Stress in p-GaN Gate High Electron Mobility Transistors
2023 · Myeongsu Chae, Hyungtak Kim · Micromachines · 9
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Time- and Temperature-dependent Degradation of p-GaN Gate HEMTs under Forward Gate Voltage Stress
2023 · Myeongsu Chae, Hyungtak Kim · JSTS Journal of Semiconductor Technology and Science · 3
Improved On-Resistance Characteristics in P-GaN/AlGaN/GaN HEMTs via Sputtered Boron Nitride Dielectric Film
2025 · Jun-Hyeok Yim, Jinhyeok Pyo, et al. · IEEE Journal of the Electron Devices Society · 2
E-Mode p-GaN/AlGaN/GaN HEMT With Diode-Engineered Gate Configuration for Extended Gate Voltage Swing
2026 · Jun-Hyeok Yim, Myeongsu Chae, et al. · IEEE Electron Device Letters · 1
Threshold voltage engineering via diode-embedded p-GaN gate HEMTs
2026 · Jun-Hyeok Yim, Myeongsu Chae, et al. · Semiconductor Science and Technology
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Gate-Current-Dominated Positive Threshold Voltage Shift Under PBTI Stress in Schottky p-GaN Gate HEMTs
2026 · Myeongsu Chae, Hyungtak Kim · IEEE Transactions on Electron Devices
Investigation of Prolonged Negative Threshold Voltage Shift Induced by Low Drain Bias in Schottky p-GaN Gate HEMTs
2026 · Myeongsu Chae, Hyungtak Kim · IEEE Journal of the Electron Devices Society
Bias and Temperature Dependence of Threshold Voltage Instability Induced by Low Drain Bias in E-mode AlGaN/GaN HEMTs
2025 · Myeongsu Chae, Hyungtak Kim · International Conference on Solid State Devices and Materials (SSDM)
P‐GaN/AlGaN/GaN E‐Mode HEMT With Extended MOS Gate
2025 · Min‐Keun Lee, Gökhan Atmaca, et al. · Electronics Letters
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Works count: 11
Citation count: 50
H-index: 3
I10-index: 2
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