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Tomoya Nagahashi

Observed name: 長橋, 知也
ORCID: 0009-0009-5939-9937
Observed ORCID: 0009-0009-5939-9937
OpenAlex ID: A5022902671
Space-induced floating electronic states in non-stoichiometric amorphous silicon nitride for memory devices applications
2025 · Mauro Boero, Kenji Shiraishi, et al. · Physical Review Materials · 7
Comparative study of the gas phase reaction of SiCl 4 , SiHCl 3 , SiH 2 Cl 2 , and SiH 3 Cl by thermodynamic analysis
2023 · Tomoya Nagahashi, Hajime Karasawa, et al. · Japanese Journal of Applied Physics · 4
Theoretical study of the gas-phase reaction of hexachlorodisilane by thermodynamic analysis and kinetics calculation
2023 · Tomoya Nagahashi, Hajime Karasawa, et al. · Japanese Journal of Applied Physics · 3
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Silicon-Richness Impact for Enhanced Charge-Trapping in 3-D NAND Flash Memories
2025 · Tomoya Nagahashi, Atsushi Oshiyama, et al. · IEEE Journal of the Electron Devices Society · 1
Optimizing SiN Composition for Enhanced Charge-Trapping in Next-Generation 3D NAND Flash Memories
2025 · Tomoya Nagahashi, Hajime Karasawa, et al. · IEEE Electron Devices Technology & Manufacturing Conference (EDTM) · 1
Theoretical investigation of NH3 nitridation on Cl-terminated Si(100)-2 × 1 surfaces
2024 · Tomoya Nagahashi, Hajime Karasawa, et al. · Surface Science · 1
Order-parameter-mediated stabilization of the ferroelectric orthorhombic phase in HfO2 by oxygen-vacancy-induced internal stress
2026 · Tomoya Nagahashi, Saaya Kuroo, et al. · Applied Physics Letters
Nandフラッシュメモリの電荷蓄積層として用いられるシリコン窒化膜の成膜過程、及び電子物性に関する理論的研究
2025 · 長橋, 知也 · Institutional Repositories DataBase (IRDB)
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Corrigendum to “Theoretical investigation of NH3 nitridation on Cl-terminated Si(100)-2 × 1 surfaces” [Surface Science 753 (2025) 122655, p2.]
2024 · Tomoya Nagahashi, Hajime Karasawa, et al. · Surface Science
Theoretical Study of the Gas-Phase Reaction of Hexachlorodisilane by Thermodynamic Analysis and Kinetics Calculation
2023 · Tomoya Nagahashi, Hajime Karasawa, et al. · International Conference on Solid State Devices and Materials (SSDM)
Works count: 10
Citation count: 17
H-index: 3
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