Author

Jin-Hyun Ahn

Observed names: J. Ahn, Jinhyun Ahn, 안진현

Institution: Jeju National University

Observed institutions: Seoul National University, Jeju National University, Stanford University

ORCID: 0000-0002-1863-121X

Observed ORCID: 0000-0002-1863-121X

OpenAlex ID: A5023209815

The effect of post oxide deposition annealing on the effective work function in metal/Al2O3/InGaAs gate stack

2014 · R. Winter, I. Krylov, et al. · Applied Physics Letters · 12

Effect and extraction of series resistance in Al 2 O 3 ‐InGaAs MOS with bulk‐oxide trap

2013 · B. Yu, Y. Yuan, et al. · Electronics Letters · 12

Fermi level pinning in metal/Al2O3/InGaAs gate stack after post metallization annealing

2015 · R. Winter, I. Krylov, et al. · Journal of Applied Physics · 10

Admittance and subthreshold characteristics of atomic-layer-deposition Al2O3 on In0.53Ga0.47As in surface and buried channel flatband metal-oxide-semiconductor field effect transistors

2012 · G. W. Paterson, S. J. Bentley, et al. · Journal of Applied Physics · 5

Color Emotion Factors and Preference of Two-Color Combinations with Contrast Tones by Naturally Dyed Fabrics with Persimmon and Indigo

2024 · Donghwa Yoon, Youngae Yang, et al. · Fibers and Polymers · 1

Stressed Growth of Anodic Aluminum Oxide Pore Array in Micron-Size Contact and Trench Patterns

2007 · Sang-Hyun Park, Jin-Hyun Ahn, et al. · ECS Meeting Abstracts

(A)Study on the reactions and interface morphology during anodization of aluminum and its underlayers, and application to AAO barrier layer removal

2007 · 안진현 · Seoul National University Open Repository (Seoul National University)

Works count: 7

Citation count: 40

H-index: 4

I10-index: 3