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Lawrence G. Matus

Observed names: L G Matus, L. G. MATUS, L. G. Matus, L.G. Matus, Matus, L. G., Matus, Lawrence G.
Observed institutions: University of Notre Dame, North Carolina State University, Glenn Research Center, National Aeronautics and Space Administration, Ohio Aerospace Institute, Case Western Reserve University, University of Colorado Colorado Springs
ORCID: 0009-0003-8820-7398
Observed ORCID: 0009-0003-8820-7398
OpenAlex ID: A5023447859
Site-competition epitaxy for superior silicon carbide electronics
1994 · David J. Larkin, Philip G. Neudeck, et al. · Applied Physics Letters · 322
Growth and Characterization of Cubic SiC Single‐Crystal Films on Si
1987 · J. Anthony Powell, Lawrence G. Matus, et al. · Journal of The Electrochemical Society · 185
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Mechanical properties of 3C silicon carbide
1992 · Lijun Tong, Mehran Mehregany, et al. · Applied Physics Letters · 132
Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafers
1991 · J. A. Powell, J. B. Petit, et al. · Applied Physics Letters · 129
Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers
1990 · J. A. Powell, D. J. Larkin, et al. · Applied Physics Letters · 125
Growth of step-free surfaces on device-size (0001)SiC mesas
2000 · J. Anthony Powell, Philip G. Neudeck, et al. · Applied Physics Letters · 100
Application of oxidation to the structural characterization of SiC epitaxial films
1991 · J. A. Powell, J. B. Petit, et al. · Applied Physics Letters · 98
2000 V 6H-SiC p-n junction diodes grown by chemical vapor deposition
1994 · Philip G. Neudeck, David J. Larkin, et al. · Applied Physics Letters · 88
High-voltage 6H-SiC p-n junction diodes
1991 · L. G. Matus, J. A. Powell, et al. · Applied Physics Letters · 73
Improved β-SiC heteroepitaxial films using off-axis Si substrates
1987 · J. A. Powell, L. G. Matus, et al. · Applied Physics Letters · 68
Compensation in epitaxial cubic SiC films
1986 · B. Segall, S. A. Alterovitz, et al. · Applied Physics Letters · 68
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Internal stress and elastic modulus measurements on micromachined 3C-SiC thin films
1997 · M. Mehregany, Lijun Tong, et al. · IEEE Transactions on Electron Devices · 62
Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substrates
1994 · P.G. Neudeck, D.J. Larkin, et al. · IEEE Transactions on Electron Devices · 53
Growth of improved quality 3C-SiC films on 6H-SiC substrates
1990 · J. A. Powell, D. J. Larkin, et al. · Applied Physics Letters · 53
High Frequency Capacitance‐Voltage Characteristics of Thermally Grown SiO2 Films on β ‐ SiC
1990 · S. M. Tang, W. B. Berry, et al. · Journal of The Electrochemical Society · 36
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Recent Developments in SiC (USA)
1989 · J. A. Powell, L. G. Matus · Springer proceedings in physics · 35
Tuning and matching the TM1 cavity
1983 · L. G. Matus, C. B. Boss, et al. · Review of Scientific Instruments · 31
Greatly improved 3C-SiC p-n junction diodes grown by chemical vapor deposition
1993 · P.G. Neudeck, D.J. Larkin, et al. · IEEE Electron Device Letters · 27
Polycrystalline silicon carbide for surface micromachining
2002 · A.J. Fleischman, S. Roy, et al. · 22
Thermal Oxidation of SiC in N 2 O
1994 · R. C. De Meo, T. K. Wang, et al. · Journal of The Electrochemical Society · 19
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Comment on “Temperature dependence of electrical properties of non-doped and nitrogen-doped beta-SiC single crystals grown by chemical vapor deposition”
1987 · B. Segall, S. A. Alterovitz, et al. · Applied Physics Letters · 19
Deep‐Level Dominated Electrical Characteristics of Au Contacts on β ‐ SiC
1990 · K. Das, H. S. Kong, et al. · Journal of The Electrochemical Society · 18
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Vibrational spectra and a potential function for the monofluorocyclopropenyl-d0 and -d2 cations
1980 · Norman C. Craig, Ronnie K. Y. Lai, et al. · Journal of the American Chemical Society · 14
An overview of silicon carbide device technology
1992 · Philip G. Neudeck, Lawrence G. Matus · AIP conference proceedings · 13
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Thermal Oxidation of Single-Crystal Silicon Carbide: Kinetic, Electrical, and Chemical Studies
1992 · J. B. Petit, P. G. Neudeck, et al. · Springer proceedings in physics · 13
Works count: 55
Citation count: 1,874
H-index: 19
I10-index: 26
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