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Philipp Drechsel

Observed names: Drechsel, Philipp 1982-, P. Drechsel
ORCID: 0000-0001-7657-4690
Observed ORCID: 0000-0001-7657-4690
OpenAlex ID: A5023473117
Wavelength‐dependent determination of the recombination rate coefficients in single‐quantum‐well GaInN/GaN light emitting diodes
2012 · Dario Schiavon, Michael Binder, et al. · physica status solidi (b) · 130
Influence of indium content and temperature on Auger-like recombination in InGaN quantum wells grown on (111) silicon substrates
2012 · B. Galler, P. Drechsel, et al. · Applied Physics Letters · 92
Blocking Growth by an Electrically Active Subsurface Layer: The Effect of Si as an Antisurfactant in the Growth of GaN
2013 · T. Markurt, L. Lymperakis, et al. · Physical Review Letters · 85
Characterization of the deep levels responsible for non-radiative recombination in InGaN/GaN light-emitting diodes
2014 · M. Meneghini, M. la Grassa, et al. · Applied Physics Letters · 62
Impact of buffer growth on crystalline quality of GaN grown on Si(111) substrates
2012 · Philipp Drechsel, Peter Stauss, et al. · physica status solidi (a) · 38
Role of low-temperature AlGaN interlayers in thick GaN on silicon by metalorganic vapor phase epitaxy
2012 · S. Fritze, P. Drechsel, et al. · Journal of Applied Physics · 37
Strain controlled growth of crack-free GaN with low defect density on silicon (1 1 1) substrate
2010 · P. Drechsel, H. Riechert · Journal of Crystal Growth · 16
Recombination dynamics in InxGa1−xN quantum wells—Contribution of excited subband recombination to carrier leakage
2014 · T. Schulz, A. Nirschl, et al. · Applied Physics Letters · 12
A predictive model for plastic relaxation in (0001)-oriented wurtzite thin films and heterostructures
2018 · T. Markurt, T. Schulz, et al. · Journal of Applied Physics · 11
Towards nanorod LEDs: Numerical predictions and controlled growth
2011 · Christopher Kölper, Werner Bergbauer, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 8
Monolitically grown dual wavelength InGaN LEDs for improved CRI
2011 · P. Stauss, M. Mandl, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 4
SRH non-radiative recombination in GaN-based LEDs: a study based on lifetime and DLTS measurements
2014 · Matteo Meneghini, Simone Vaccari, et al.
Back Cover: Wavelength‐dependent determination of the recombination rate coefficients in single‐quantum‐well GaInN/GaN light emitting diodes (Phys. Status Solidi B 2/2013)
2013 · Dario Schiavon, Michael Binder, et al. · physica status solidi (b)
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Dislocation Mechanisms and Strain Relaxation in the Growth of GaN on Silicon Substrates for Solid State Lighting
2012 · M. Albrecht, T. Markurt, et al. · Max Planck Institute for Plasma Physics
Works count: 17
Citation count: 495
H-index: 9
I10-index: 9
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