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Luis Eduardo Seixas Junior

Observed names: L E Seixas, L. E. Seixas, L. E. Seixas Júnior, L.E. Seixas, Luis E. Seixas, Luis Eduardo Seixas, Luis Seixas, Luís Eduardo Seixas, Luís Eduardo Seixas Junior
ORCID: 0000-0001-5114-650X
Observed ORCID: 0000-0001-5114-650X
OpenAlex ID: A5023572785
Ionizing radiation hardness tests of GaN HEMTs for harsh environments
2020 · Alexis C. Vilas Bôas, M.A.A. de Melo, et al. · Microelectronics Reliability · 44
Experimental setup for Single Event Effects at the São Paulo 8UD Pelletron Accelerator
2014 · V.A.P. Aguiar, N. Added, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 42
SAFIIRA: A heavy-ion multi-purpose irradiation facility in Brazil
2020 · V. A. P. Aguiar, N. H. Medina, et al. · Review of Scientific Instruments · 24
Improving MOSFETs’ TID Tolerance Through Diamond Layout Style
2017 · L. E. Seixas, O. L. Goncalez, et al. · IEEE Transactions on Device and Materials Reliability · 23
Study of proton radiation effects among diamond and rectangular gate MOSFET layouts
2017 · L E Seixas, S Finco, et al. · Materials Research Express · 23
Minimizing the TID effects due to gamma rays by using diamond layout for MOSFETs
2019 · Luís Eduardo Seixas, Odair Lellis Gonçalez, et al. · Journal of Materials Science Materials in Electronics · 16
Performance of electronic devices submitted to X-rays and high energy proton beams
2011 · M.A.G. Silveira, K.H. Cirne, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 16
Radiation Hardness of GaN HEMTs to TID Effects: COTS for harsh environments
2019 · Alexis C. Vilas Boas, M. A. A. de Melo, et al. · European Conference on Radiation and Its Effects on Components and Systems · 15
A Commercial off-the-shelf pMOS Transistor as X-ray and Heavy Ion Detector
2015 · M A G Silveira, M A A Melo, et al. · Journal of Physics Conference Series · 12
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First Successful SEE Measurements with Heavy Ions in Brazil
2014 · N. H. Medina, M. A. G. Silveira, et al. · IEEE Radiation Effects Data Workshop (REDW) · 12
Comparative study of the proton beam effects between the conventional and Circular-Gate MOSFETs
2011 · K. Cirne, M.A.G. Silveira, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 11
Radiation Hardened Latching Current Limiter for Space Applications
2023 · Agnaldo Vieira Dias, Silvio Manea, et al. · IEEE Aerospace Conference (AERO) · 9
Boosting the Ionizing Radiation Tolerance in the Mosfets Matching by Using Diamond Layout Style
2019 · Vinicius Vono Peruzzi, William Souza da Cruz, et al. · Symposium on Microelectronics Technology and Devices · 9
Assessment of Ionizing Radiation Hardness of a GaN Field-Effect Transistor
2019 · Alexis C. Vilas Boas, M. A. A. de Melo, et al. · Symposium on Microelectronics Technology and Devices · 8
A New Test Environment Approach to SEE Detection in MOSFETs
2015 · Luis E. Seixas, M.A.G. Silveira, et al. · Advanced materials research · 7
Reliability analysis of gamma- and X-ray TID effects, on a commercial AlGaN/GaN based FET
2021 · Alexis Cristiano Vilas Bôas, Saulo Gabriel Alberton, et al. · Journal of Integrated Circuits and Systems · 6
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VI-Based Measurement System Focusing on Space Applications
2017 · L. E. Seixas, S. Finco, et al. · Journal of Electronic Testing · 6
X-ray Radiation Effects in Circular-Gate Transistors
2011 · Klaus H. Cirne, Marcilei Silveira, et al. · ECS Transactions · 6
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Overview About Radiation–Matter Interaction Mechanisms and Mitigation Techniques
2018 · R. N. S. Raphael, L. E. Seixas, et al. · Springer eBooks · 4
Leiaute diamante par MOSFETS sob os efeitos das radiações ionizantes
2017 · L. E. Seixas Júnior · 4
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TID Radiation Effects on a 0.6 μm Sigma Delta ADC Radiation-Hardened-by-Design using ELTs
2023 · Angela Alves Dos Santos, Jair L. Emeri, et al. · IEEE Aerospace Conference (AERO) · 3
Ionizing Radiation Hardness Characterization of GaN HEMTs Depends on the Radiation Source
2022 · A.C.V. Bôas, S.G. Alberton, et al. · European Conference on Radiation and Its Effects on Components and Systems · 3
Brazilian facilities to study radiation effects in electronic devices
2013 · N. H. Medina, M. A. G. Silveira, et al. · European Conference on Radiation and Its Effects on Components and Systems · 3
An Unsupervised Learning Approach to Validate the Robustness of Octagonal MOSFETs in X-Ray Environments
2026 · Vinicius Vono Peruzzi, Daniel Marchesi De Camargo Neves, et al. · IEEE Access · 2
Total Ionizing Dose (TID) Effects on Variability and Mismatch in MOSFETs with Novel Layouts
2025 · Vinicius Vono Peruzzi, Gabriel Augusto da Silva, et al. · Symposium on Microelectronics Technology and Devices · 2
Works count: 48
Citation count: 324
H-index: 11
I10-index: 11
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