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Harsupreet Kaur
Observed name:
H. Kaur
Institution:
University of Delhi
Observed institution:
University of Delhi
ORCID:
0000-0001-8012-2048
Observed ORCID:
0000-0001-8012-2048
OpenAlex ID:
A5023640189
Modeling and simulation study of novel Double Gate Ferroelectric Junctionless (DGFJL) transistor
2016
·
Hema Mehta
, Harsupreet Kaur
·
Superlattices and Microstructures
·
48
An analytical drain current model for graded channel cylindrical/surrounding gate MOSFET
2007
·
Harsupreet Kaur
, Sneha Kabra
, et al.
·
Microelectronics Journal
·
48
Impact of graded channel (GC) design in fully depleted cylindrical/surrounding gate MOSFET (FD CGT/SGT) for improved short channel immunity and hot carrier reliability
2007
·
Harsupreet Kaur
, Sneha Kabra
, et al.
·
Solid-State Electronics
·
46
Impact of Gaussian Doping Profile and Negative Capacitance Effect on Double-Gate Junctionless Transistors (DGJLTs)
2018
·
Hema Mehta
, Harsupreet Kaur
·
IEEE Transactions on Electron Devices
·
40
An analytical threshold voltage model for graded channel asymmetric gate stack (GCASYMGAS) surrounding gate MOSFET
2007
·
Harsupreet Kaur
, Sneha Kabra
, et al.
·
Solid-State Electronics
·
30
Study on Impact of Parasitic Capacitance on Performance of Graded Channel Negative Capacitance SOI FET at High Temperature
2019
·
Hema Mehta
, Harsupreet Kaur
·
IEEE Transactions on Electron Devices
·
26
Analysis of Negative-Capacitance Germanium FinFET With the Presence of Fixed Trap Charges
2019
·
Monika Bansal
, Harsupreet Kaur
·
IEEE Transactions on Electron Devices
·
23
Two-dimensional subthreshold analysis of sub-micron GaN MESFET
2007
·
Sneha Kabra
, Harsupreet Kaur
, et al.
·
Microelectronics Journal
·
16
Improved Temperature Resilience and Device Performance of Negative Capacitance Reconfigurable Field Effect Transistors
2020
·
Priyanka Pandey
, Harsupreet Kaur
·
IEEE Transactions on Electron Devices
·
14
Implementing variable doping and work function engineering in β-Ga2O3 MOSFET to realize high breakdown voltage and PfoM
2022
·
Priyanshi Goyal
, Harsupreet Kaur
·
Semiconductor Science and Technology
·
13
PDF
Temperature dependent analytical model of sub-micron GaN MESFETs for microwave frequency applications
2007
·
Sneha Kabra
, Harsupreet Kaur
, et al.
·
Solid-State Electronics
·
13
Impact of negative capacitance effect on Germanium Double Gate pFET for enhanced immunity to interface trap charges
2018
·
Monika Bansal
, Harsupreet Kaur
·
Superlattices and Microstructures
·
12
High temperature performance of Si:HfO2 based long channel Double Gate Ferroelectric Junctionless Transistors
2017
·
Hema Mehta
, Harsupreet Kaur
·
Superlattices and Microstructures
·
12
Performance and Sensitivity Analysis of Polarity Controllable-Ion Sensitive FET for pH Sensing Applications
2022
·
Priyanka Pandey
, Harsupreet Kaur
·
Silicon
·
11
Exploring the efficacy of implementing field plate design with air gap on β-Ga2O3 MOSFET for high power & RF applications
2022
·
Priyanshi Goyal
, Harsupreet Kaur
·
Micro and Nanostructures
·
10
A semi empirical approach for submicron GaN MESFET using an accurate velocity field relationship for high power applications
2005
·
Sneha Kabra
, Harsupreet Kaur
, et al.
·
Microelectronics Journal
·
10
Performance assessment of symmetric double gate negative capacitance junctionless transistor with high- k spacer at elevated temperatures
2019
·
Hema Mehta
, Harsupreet Kaur
·
Advances in Natural Sciences Nanoscience and Nanotechnology
·
9
Superior Performance and Reliability of Double Gate Gaussian Doped Negative Capacitance Junctionless Transistor for 200–500 K
2019
·
Hema Mehta
, Harsupreet Kaur
·
IETE Technical Review
·
8
Subthreshold analytical model for dual-material double gate ferroelectric field effect transistor (DMGFeFET)
2019
·
Hema Mehta
, Harsupreet Kaur
·
Semiconductor Science and Technology
·
8
Implementation of source extended multiple field plates and asymmetric doping on β-Ga2O3 MOSFET for high power applications
2023
·
Priyanshi Goyal
, Harsupreet Kaur
·
Micro and Nanostructures
·
7
An analytical model for GaN MESFET's using new velocity‐field dependence
2006
·
Sneha Kabra
, Harsupreet Kaur
, et al.
·
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics
·
6
Exploring the performance of palladium gated – SiGe channel – Polarity controllable–FET for hydrogen gas monitoring applications
2022
·
Priyanka Pandey
, Harsupreet Kaur
·
Micro and Nanostructures
·
5
Performance investigation of Reconfigurable–FET under the influence of parameter variability of ferroelectric gate stack at high temperatures
2022
·
Priyanka Pandey
, Harsupreet Kaur
·
Microelectronics Journal
·
5
Performance investigation of Negative Capacitance Germanium Double Gate-pFET (NCGe-DG-pFET) for improved analog applications
2018
·
Monika Bansal
, Harsupreet Kaur
·
International Symposium on Devices, Circuits and Systems (ISDCS)
·
5
Impact of Dual Material Gate Design and Retrograde Channel Doping on β-Ga2O3 MOSFET for High Power and RF Applications
2022
·
Priyanshi Goyal
, Harsupreet Kaur
·
Silicon
·
4
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Works count:
94
Citation count:
481
H-index:
12
I10-index:
16
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