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Housei Akazawa

Observed names: H Akazawa, H. AKAZAWA, H. Akazawa, Housei AKAZAWA, Housei Akazaw, Housei Akazawa Housei Akazawa
Institution: NTT (Japan)
ORCID: 0000-0002-9807-8564
Observed ORCID: 0000-0002-9807-8564
OpenAlex ID: A5024064783
Formation of various phases of gallium oxide films depending on substrate planes and deposition gases
2015 · Housei Akazawa · Vacuum · 68
Ionic photodissociation of excited electron donor-acceptor systems. II. Importance of the chemical property of donor-acceptor pairs
1976 · T. Hino, H. Akazawa, et al. · The Journal of Physical Chemistry · 54
Photostimulated evaporation of SiO2 films by synchrotron radiation
1990 · H. Akazawa, Y. Utsumi, et al. · Applied Physics Letters · 53
Interaction of reactive ions with Pt(100). I. Neutralization and surface trapping
1990 · Housei Akazawa, Yoshitada Murata · The Journal of Chemical Physics · 49
Synchrotron radiation excited Si epitaxial growth using disilane gas source molecular beam system
1991 · Jun-ichi Takahashi, Yuichi Utsumi, et al. · Applied Physics Letters · 47
Photostimulated evaporation of SiO2 and Si3N4 films by synchrotron radiation and its application for low-temperature cleaning of Si surfaces
1991 · H. Akazawa, J. Takahashi, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 46
Interaction of reactive ions with Pt(100). II. Dissociative scattering of molecular ions near the threshold energy region
1990 · Housei Akazawa, Yoshitada Murata · The Journal of Chemical Physics · 45
Mechanism for LiNb 3 O 8 phase formation during thermal annealing of crystalline and amorphous LiNbO 3 thin films
2007 · H. Akazawa, M. Shimada · Journal of materials research/Pratt's guide to venture capital sources · 38
Characterization of crystallographic orientation and lattice disorder in hydroxyapatite thin films by Raman scattering
2021 · Housei Akazawa · Ceramics International · 33
Neutralization of Very-Low-Energy Ions on Pt(100)
1988 · Housei Akazawa, Yoshitada Murata · Physical Review Letters · 33
Dissociative scattering of low energy N2+ ion beam on Pt(100)
1989 · Housei Akazawa, Yoshitada Murata · Surface Science · 32
Synchrotron-radiation-stimulated evaporation and defect formation ina- SiO2
1995 · Housei Akazawa · Physical review. B, Condensed matter · 30
Highly conductive, undoped ZnO thin films deposited by electron-cyclotron-resonance plasma sputtering on silica glass substrate
2009 · Housei Akazawa · Thin Solid Films · 29
Resonance-like phenomena in activated dissociative adsorption: N+2 on Ni(100) and Ni(111)
1988 · Housei Akazawa, Yoshitada Murata · The Journal of Chemical Physics · 29
Reaction kinetics in synchrotron-radiation-excited Si epitaxy with disilane. I. Atomic layer epitaxy
1995 · Housei Akazawa, Yuichi Utsumi · Journal of Applied Physics · 28
Si crystal growth mediated by synchrotron-radiation-stimulated hydrogen desorption
1993 · Housei Akazawa, Yuichi Utsumi, et al. · Physical review. B, Condensed matter · 27
Combinatorial characterization of transparent conductive properties of Ga-doped ZnO films cosputtered from electron cyclotron resonance and rf magnetron plasma sources
2010 · Housei Akazawa · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 26
Correlation between interfacial structure and c-axis-orientation of LiNbO3 films grown on Si and SiO2 by electron cyclotron resonance plasma sputtering
2004 · H. Akazawa, M. Shimada · Journal of Crystal Growth · 26
Electron cyclotron resonance plasma sputtering growth of textured films of c-axis-oriented LiNbO3 on Si(100) and Si(111) surfaces
2004 · H. Akazawa, M. Shimada · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 23
Formation of a transient Si hydride multilayer and recrystallization of a Si-Si network during vacuum-ultraviolet-excited Si homoepitaxy from Si2H6
1999 · Housei Akazawa · Physical review. B, Condensed matter · 22
Neutralization of noble-gas ions at very low energies
1989 · H. Akazawa, Y. Murata · Physical review. B, Condensed matter · 21
Crystallinity Improvement by Synchrotron Radiation Irradiation in Low-Temperature Si Epitaxial Growth Using Disilane
1991 · Yuichi Utsumi, Jun-ichi Takahashi, et al. · Japanese Journal of Applied Physics · 20
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Concentration effect of H/OH and Eu3+ species on activating photoluminescence from ZnO:Eu3+ thin films
2013 · Housei Akazawa, Hiroyuki Shinojima · Journal of Applied Physics · 19
Synchrotron radiation‐stimulated photochemical reaction and its application to semiconductor processes
1991 · Tsuneo Urisu, Jun‐Ichi Takahashi, et al. · Applied Organometallic Chemistry · 19
High-performance beamline for vacuum-ultraviolet-excited material processing
1998 · H. Akazawa, J. Takahashi · Review of Scientific Instruments · 18
Works count: 188
Citation count: 1,626
H-index: 21
I10-index: 59
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