Author

T. H. Duong

Observed names: T. Duong, T.H. Duong

Institution: National Institute of Standards and Technology

Observed institution: National Institute of Standards and Technology

ORCID: 0009-0004-7229-0331

Observed ORCID: 0009-0004-7229-0331

OpenAlex ID: A5024100111

Electro-thermal simulation of 1200 V 4H-SiC MOSFET short-circuit SOA

2015 · T. H. Duong, J. M. Ortiz, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 38

High-Voltage capacitance measurement system for SiC power MOSFETs

2009 · P. Ralston, T.H. Duong, et al. · IEEE Energy Conversion Congress and Exposition (ECCE) · 35

Physics-based electro-thermal Saber model and parameter extraction for high-voltage SiC buffer-layer IGBTs

2014 · T. H. Duong, A. R. Hefner, et al. · IEEE Energy Conversion Congress and Exposition (ECCE) · 15

High-Voltage, High-Frequency SiC Power MOSFETs Model Validation*

2007 · J. M. Ortiz-Rodriguez, T. Duong, et al. · IEEE Power Electronics Specialists Conference (PESC) · 13

Circuit simulation model for a 100 A, 10 kV half-bridge SiC MOSFET/JBS power module

2008 · T. H. Duong, A. Rivera-Lopez, et al. · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · 11

Electro-thermal simulation of a 100 A, 10 kV half-bridge SiC MOSFET/JBS power module

2008 · T. H. Duong, J. M. Ortiz-Rodriguez, et al. · IEEE Power Electronics Specialists Conference (PESC) · 8

Performance of Hybrid 4.5 kV SiC JBS Freewheeling Diode and Si IGBT

2012 · Karl D. Hobart, Eugene A. Imhoff, et al. · Materials science forum · 3

A Suitable Method to Obtain and Compare AC-DC Difference Loading Errors of Thermal Transfer Standards

2024 · T. Duong, S. Cular · Conference on Precision Electromagnetic Measurements

Works count: 8

Citation count: 123

H-index: 6

I10-index: 5