Author

Mani Shankar Yadav

Institution: Indian Institute of Technology Ropar

Observed institution: Indian Institute of Technology Ropar

ORCID: 0000-0002-5594-7141

Observed ORCID: 0000-0002-5594-7141

OpenAlex ID: A5024454286

Design and modeling of niobium oxide-tantalum oxide based self-selective memristor for large-scale crossbar memory

2021 · Aditya Kuber Parit, Mani Shankar Yadav, et al. · Chaos Solitons & Fractals · 31

Device-circuit co-design of memristor-based on niobium oxide for large-scale crossbar memory

2023 · Avinash Kumar Gupta, Mani Shankar Yadav, et al. · Memories - Materials Devices Circuits and Systems · 5

Analysis and Modeling of Bipolar Resistive Switching in 2-D Graphene Electrode- Based Memristor

2023 · Kanupriya Varshney, Mani Shankar Yadav, et al. · IEEE Transactions on Electron Devices · 4

Memory Switching versus Threshold Memory Switching: Finding a Promising Synaptic Device for Brain-Inspired Artificial Learning Systems

2024 · Mani Shankar Yadav, Kanupriya Varshney, et al. · ACS Applied Engineering Materials · 2

Unveiling the Role of Nanoscale-Thick Thermal Enhancement Layers in Tuning Analog Switching and Synaptic Plasticity of Memristor

2025 · Mani Shankar Yadav, Avinash Kumar Gupta, et al. · ACS Applied Nano Materials · 1

Performance of Graphene Oxide-based Memristor for Nonvolatile Memory and Neuromorphic Computing

2022 · Kanupriya Varshney, Mani Shankar Yadav, et al. · IEEE International Conference on Emerging Electronics (ICEE) · 1

Modulation of Resistive Switching Behaviour of TaOx-based Memristor Through Device Engineering

2022 · Kummara Poojith, Kanupriya Varshney, et al. · IEEE International Conference for Convergence in Technology (I2CT) · 1

Amorphous Erbium Oxide (Er2O3) Memristors with Highly Linear Weight Updates for Artificial Synapses

2026 · Mrinal Malhotra, Mani Shankar Yadav, et al. · ACS Applied Electronic Materials

Performance Investigation of HfO X -Based 1-Transistor–1-Memristor Cell for In-Memory Logic Gates Implementation

2026 · Mani Shankar Yadav, Sukesh Gupta, et al. · IEEE Journal on Emerging and Selected Topics in Circuits and Systems

A Sub-1 V Analog Memristor Utilizing Rare-Earth Erbium Oxide (Er 2 O 3 ) for Energy-Efficient In-Memory Computing

2025 · Mrinal Malhotra, Mani Shankar Yadav, et al. · IEEE International Conference on Emerging Electronics (ICEE)

Accelerating the Self-consistent Quantum Transport Simulation Model With Advanced Trained Neural Networks

2025 · Mani Shankar Yadav, Akhilesh Rawat, et al. · IEEE International Conference on Artificial Intelligence Circuits and Systems (AICAS)

Exploring the Potential of a 1T-1M HfOX-Based Resistive Switching Device for Articulating Artificial Neural Network Hardware

2024 · Sukesh Gupta, Mani Shankar Yadav, et al. · CAS proceedings

To be appear at VLSID 2024 Finding a Promising Oxide Material for Resistive Random Access Memory with Graphene Electrode

2024 · Kanupriya Varshney, Mani Shankar Yadav, et al.

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Device-Circuit Co-design of Memristor-based on Niobium Oxide for Large-Scale Crossbar Memory

2022 · Avinash Kumar, Mani Shankar Yadav, et al.

Device-Circuit Co-design of Memristor-based on Niobium Oxide for Large-Scale Crossbar Memory

2022 · Avinash Kumar, Mani Shankar Yadav, et al.

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How Good Silicon Oxide-based Memristor Can be?

2022 · Mani Shankar Yadav, Avinash Kumar Gupta, et al. · International Conference on VLSI Design and International Conference on Embedded Systems (VLSID)

Works count: 16

Citation count: 45

H-index: 3

I10-index: 1