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Deepthi Cingu
Observed name:
D. Cingu
Institution:
IMEC
Observed institution:
IMEC
ORCID:
0000-0002-3042-7289
Observed ORCID:
0000-0002-3042-7289
OpenAlex ID:
A5024492292
1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates
2024
·
S. Kumar
, K. Geens
, et al.
·
IEEE Electron Device Letters
·
32
PDF
200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs
2021
·
T. Cosnier
, O. Syshchyk
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
27
Reliability of p-GaN Gate HEMTs in Reverse Conduction
2021
·
Deepthi Cingu
, Xiangdong Li
, et al.
·
IEEE Transactions on Electron Devices
·
23
Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing
2023
·
Walter Gonçalez Filho
, Matteo Borga
, et al.
·
Scientific Reports
·
15
PDF
Route Toward Commercially Manufacturable Vertical GaN Devices
2023
·
Karen Geens
, M. Borga
, et al.
·
IEEE Transactions on Electron Devices
·
13
PDF
Electrical Stability of MOS Structures With AlON and Al₂O₃ Dielectrics Deposited on n- and p-Type GaN
2024
·
Walter Gonçalez Filho
, Matteo Borga
, et al.
·
IEEE Transactions on Electron Devices
·
11
Mg activation anneal of the p-GaN body in trench gate MOSFETs and its effect on channel mobility and threshold voltage stability
2024
·
Walter Gonçalez Filho
, Matteo Borga
, et al.
·
Applied Physics Letters
·
11
Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power Circuits
2022
·
Olga Syshchyk
, Thibault Cosnier
, et al.
·
IEEE European Solid-State Device Research Conference (ESSDERC)
·
7
Poole–Frenkel emission and bulk charge trapping in AlON deposited on GaN and comparison to Al2O3
2026
·
Walter Gonçalez Filho
, Matteo Borga
, et al.
·
Journal of Applied Physics
·
1
PDF
Stability of Monolithically Integrated Power devices for 200V GaN-on-SOI power circuits platform
2022
·
Deepthi Cingu
, Olga Syshchyk
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
·
1
Anomalous punch-through current behavior in GaN due to trap-assisted space charge limited conduction triggered by threading dislocations with an edge component
2026
·
Walter Gonçalez Filho
, Matteo Borga
, et al.
·
Solid-State Electronics
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Works count:
11
Citation count:
141
H-index:
7
I10-index:
7
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