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Xiaofeng Jia
Observed name:
xiaofeng jia
Institutions:
Chinese Academy of Sciences,
Institute of Microelectronics,
Anyang Institute of Technology
Observed institutions:
Chinese Academy of Sciences,
Institute of Microelectronics,
Institute of Microbiology,
Anyang Institute of Technology,
University of Chinese Academy of Sciences
ORCID:
0009-0007-4551-1495
Observed ORCIDs:
0009-0007-4551-1495,
0000-0002-8600-9369
OpenAlex ID:
A5024550430
Hybrid integrated Si nanosheet GAA-FET and stacked SiGe/Si FinFET using selective channel release strategy
2023
·
Fei Zhao
, Xiaofeng Jia
, et al.
·
Microelectronic Engineering
·
17
Intermittent cutting behavior and grinding force model in ultrasonic vibration-assisted grinding K4002 nickel-based superalloy
2024
·
Yang Cao
, Biao Zhao
, et al.
·
The International Journal of Advanced Manufacturing Technology
·
14
PDF
A novel Ω-SOI Gate-All-Around FET with doping free load-Si and two-step wet etching achieving superior leakage suppression and short-channel effects immunity
2024
·
Longyu Sun
, Haoyan Liu
, et al.
·
Microelectronics Journal
·
7
Stacked SiGe/Si I/O FinFET device preparation in a vertically stacked gate-all-around technology
2023
·
Fei Zhao
, Yan Li
, et al.
·
Materials Science in Semiconductor Processing
·
7
Novel Stacked SiGe/Si FinFET Device with Subthreshold Swing of 68 mV/dec Using Optimized Thermal Budget and Channel Passivation Technology
2023
·
fei zhao
, Yongliang Li
, et al.
·
Silicon
·
5
Matched Threshold Voltage of n-Si/p-SiGe Hybrid-Channel Gate-All-Around CMOS Transistors Using a Single LaFMD Dipole With the Same n-Type Metal Gate
2026
·
Xin Wang
, Xiaotong Mao
, et al.
·
IEEE Electron Device Letters
·
3
Four-Level Stacked Si 0.7 Ge 0.3 Channel Gate-All-Around Transistor Using Novel Channel Release and Passivation Technology
2026
·
Xiaofeng Jia
, Fei Zhao
, et al.
·
IEEE Transactions on Electron Devices
·
2
Si0.5Ge0.5 Channel FinFET Preparation on an In Situ Doped SiGe SRB and Its Electrical Characteristics Optimization
2023
·
Anlan Chen
, Yongliang Li
, et al.
·
ECS Journal of Solid State Science and Technology
·
1
Recent Advances in Ultrasonic Vibration-Assisted Machining of Ti-Al Intermetallic Compounds
2026
·
Zongxia Fu
, Xuansheng Zhao
, et al.
·
Journal of Manufacturing and Materials Processing
A Reconfigurable Field-Effect Transistor With Vertically Stacked Control and Polarity Gate Enabling Decoupled I ON / I OFF Control and Symmetric On-State Operation
2026
·
Fei Zhao
, Yan Li
, et al.
·
IEEE Transactions on Electron Devices
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Works count:
10
Citation count:
56
H-index:
5
I10-index:
2
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