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Author

Alexander May

Observed names: A. May, May, Alexander
ORCID: 0000-0001-8714-5840
Observed ORCID: 0000-0001-8714-5840
OpenAlex ID: A5024678954
Magnetite nanoparticles as efficient materials for removal of glyphosate from water
2019 · Hyoungwon Park, Alexander May, et al. · Nature Sustainability · 136
Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology
2021 · Joost Romijn, Sten Vollebregt, et al. · IEEE Transactions on Electron Devices · 62
A Highly Linear Temperature Sensor Operating up to 600°C in a 4H-SiC CMOS Technology
2023 · Jiarui Mo, Jinglin Li, et al. · IEEE Electron Device Letters · 44
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Integrated 64 pixel UV image sensor and readout in a silicon carbide CMOS technology
2022 · Joost Romijn, Sten Vollebregt, et al. · Microsystems & Nanoengineering · 44
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A 4H-SiC CMOS Technology enabling Smart Sensor Integration and Circuit Operation above 500 °C
2024 · Alexander May, Mathias Rommel, et al. · Smart Systems Integration Conference and Exhibition (SSI) · 19
A 4H-SiC CMOS Oscillator-Based Temperature Sensor Operating from 298 K up to 573 K
2023 · Nicola Rinaldi, Rosalba Liguori, et al. · Sensors · 14
An analog to digital converter in a SiC CMOS technology for high-temperature applications
2024 · Jiarui Mo, Yunfan Niu, et al. · Applied Physics Letters · 13
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Threshold Voltage Adjustment on 4H-SiC MOSFETs Using P-Doped Polysilicon as a Gate Material
2023 · Alexander May, Mathias Rommel, et al. · Key engineering materials · 13
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Microfabricated albedo insensitive sun position sensor system in silicon carbide with integrated 3D optics and CMOS electronics
2023 · Joost Romijn, Sten Vollebregt, et al. · Sensors and Actuators A Physical · 13
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A 4H-SiC NMOSFET-Based Temperature Sensor Operating Between 14K and 481 K
2024 · Nicola Rinaldi, Alexander May, et al. · IEEE Electron Device Letters · 11
Temperature Sensing Elements for Harsh Environments in a 4H-SiC CMOS Technology
2024 · Jiarui Mo, Jinglin Li, et al. · IEEE Transactions on Electron Devices · 11
Resistive and CTAT Temperature Sensors in a Silicon Carbide CMOS Technology
2021 · Joost Romijn, Luke M. Middelburg, et al. · Proceedings of IEEE Sensors/Proceedings of IEEE Sensors ... · 11
Visible Blind Quadrant Sun Position Sensor in a Silicon Carbide Technology
2022 · Joost Romijn, Sten Vollebregt, et al. · IEEE International Conference on Micro Electro Mechanical Systems (MEMS) · 9
A 4H-SiC CMOS SPICE Level 3 Model for Circuit Simulations
2024 · Nicola Rinaldi, Alexander May, et al. · IEEE Electron Device Letters · 7
Via Size-Dependent Properties of TiAl Ohmic Contacts on 4H-SiC
2022 · Alexander May, Mathias Rommel, et al. · Materials science forum · 7
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Analysis of a 4H-SiC Lateral PMOSFET Temperature Sensor Between 14 K–482 K
2025 · Nicola Rinaldi, Mathias Rommel, et al. · IEEE Sensors Letters · 6
Analysis and Design of an SiC CMOS Three-Channel DC-DC Synchronous Buck Converter for High-Temperature Applications
2024 · Andres Martinez, Felipe Torres, et al. · Applied Sciences · 6
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Investigation of Ohmic Contacts and Resistances of a 4H-SiC CMOS Technology up to 550 Degrees C
2024 · Mathias Rommel, Alexander May, et al. · Journal of Microelectronics and Electronic Packaging · 4
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Temperature Dependence of 4H-SiC Gate Oxide Breakdown and C-V Properties from Room Temperature to 500 °C
2024 · Alexander May, Leander Baier, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 4
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Temperature dependent trap characterisation and modelling of silicon carbide MOS capacitor
2024 · Jinglin Li, Sten Vollebregt, et al. · International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) · 4
Towards Sic-Based VUV Pin-Photodiodes - Investigations on 4H-SiC Photodiodes with Shallow Implanted Al Emitters
2023 · Michael Schraml, Niklas Papathanasiou, et al. · Key engineering materials · 3
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Scalable Fabrication and Electrical Characterization of Lateral Pin-Diodes on 4H-SiC A-Plane Wafers for Functionalization of Silicon Vacancies
2026 · Jannik H. Schwarberg, Christian Gobert, et al. · Key engineering materials · 2
SiC CMOS Gate Driver for High-Temperature Aerospace Applications
2024 · Felipe Torres, Andrés Martínez, et al. · Argentine Conference on Electronics (CAE) · 2
4H-SiC PIN Photodiode for VUV Detection Using an Enhanced Emitter Doping Design
2023 · M. Schraml, N. Papathanasiou, et al. · IEEE Photonics Conference · 2
Time-Dependent Dielectric Breakdown of 4H-SiC MOSFETs in CMOS Technology
2023 · Yaqian Zhang, Jiarui Mo, et al. · International Conference on Electronic Packaging Technology (ICEPT) · 2
Works count: 43
Citation count: 454
H-index: 11
I10-index: 12
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