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Holger Schlichting

Observed names: H. Schlichting, Schlichting, Holger
ORCID: 0000-0001-6900-0795
Observed ORCID: 0000-0001-6900-0795
OpenAlex ID: A5024798388
RESURF n-LDMOS Transistor for Advanced Integrated Circuits in 4H-SiC
2020 · J. WeiBe, C. Matthus, et al. · IEEE Transactions on Electron Devices · 38
Influence of Triangular Defects on the Electrical Characteristics of 4H-SiC Devices
2018 · Johannes Schoeck, Holger Schlichting, et al. · Materials science forum · 10
1700V 34mΩ 4H-SiC MOSFET With Retrograde Doping in Junction Field-Effect Transistor Region
2019 · Weijiang Ni, Xiaoliang Wang, et al. · IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) · 7
Design and Fabrication of 3300V 100mΩ 4H-SiC MOSFET with Stepped p-body Structure
2019 · Weijiang Ni, Xiaoliang Wang, et al. · China International Forum on Solid State Lighting & International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) · 4
The Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performance and Reliability
2023 · Holger Schlichting, Minwho Lim, et al. · Materials science forum · 3
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Design and Fabrication of 4H-Sic Mosfets with Optimized JFET and p-Body Design
2020 · Wei Jiang Ni, Xiao Liang Wang, et al. · Materials science forum · 3
Modelling-Augmented Failure Diagnostics in Planar SiC MOS Devices Using TDDB Measurements
2024 · Davide Cornigli, Holger Schlichting, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 2
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Influence of Aluminum Compensation Effects in 4H-SiC on the Performance of VDMOS Transistors
2020 · Holger Schlichting, Matthias Kocher, et al. · Materials science forum · 1
Influence of Shallow Pits and Device Design of 4H-SiC VDMOS Transistors on In-Line Defect Analysis by Photoluminescence and Differential Interference Contrast Mapping
2020 · Matthias Kocher, Holger Schlichting, et al. · Materials science forum · 1
Design Considerations for Robust Manufacturing and High Yield of 1.2 kV 4H-SiC VDMOS Transistors
2019 · Holger Schlichting, Tomasz Sledziewski, et al. · Materials science forum · 1
Gate Oxide Performance and Reliability on SmartSiC™ Wafers and the Influence of RTA Processing on Gate Oxide Lifetime
2025 · Tom Becker, Mathias Rommel, et al. · Materials science forum
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Fabrication of Broadband Antireflective Sub-Micro Structures on 4H-SiC by Mesh Patterning Etching
2018 · Jun Yuan, Holger Schlichting, et al. · DEStech Transactions on Environment Energy and Earth Science
Works count: 18
Citation count: 70
H-index: 4
I10-index: 2
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