Author

Xionghui Jia

Institution: North China Research Institute of Electro-optics

Observed institutions: Peking University, Collaborative Innovation Center of Quantum Matter, North China Research Institute of Electro-optics, State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, University of Science and Technology Beijing

ORCID: 0000-0003-4354-6540

Observed ORCID: 0000-0003-4354-6540

OpenAlex ID: A5024865519

Consequence of Optimal Bonding on Disordered Structure and Improved Luminescence Properties in T-Phase (Ba,Ca)2SiO4:Eu2+ Phosphor

2018 · Lizhu He, Zhen Song, et al. · Inorganic Chemistry · 53

High‐Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD‐Grown n‐MoS2 and p‐MoTe2

2023 · Xionghui Jia, Zhixuan Cheng, et al. · Small · 38

Atomic‐Precision Repair of a Few‐Layer 2H‐MoTe2 Thin Film by Phase Transition and Recrystallization Induced by a Heterophase Interface

2020 · Xiaolong Xu, Bo Han, et al. · Advanced Materials · 34

Control of Luminescence in Eu2+-Doped Orthosilicate-Orthophosphate Phosphors by Chainlike Polyhedra and Electronic Structures

2017 · Lizhu He, Zhen Song, et al. · Inorganic Chemistry · 33

Low-power-consumption CMOS inverter array based on CVD-grown p-MoTe2 and n-MoS2

2021 · Wanying Du, Xionghui Jia, et al. · iScience · 19

Radiation-Resistant CsPbBr3 Nanoplate-Based Lasers

2020 · Tingting Wang, Weitao Yang, et al. · ACS Applied Nano Materials · 19

Large‐Scale Vertically Interconnected Complementary Field‐Effect Transistors Based on Thermal Evaporation

2023 · Yuqia Ran, Yiwen Song, et al. · Small · 17

P/N-Type Conversion of 2D MoTe 2 Controlled by Top Gate Engineering for Logic Circuits

2024 · Zhixuan Cheng, Xionghui Jia, et al. · ACS Applied Materials & Interfaces · 14

Indirect Band Nature of Atomically Thin Hexagonal Boron Nitride Identified by Resonant Excitation in the Deep Ultraviolet Regime

2025 · Lei Fu, Yuqing Hu, et al. · Physical Review Letters · 13

Nanoscale Channel Length MoS2 Vertical Field-Effect Transistor Arrays with Side-Wall Source/Drain Electrodes

2024 · Xionghui Jia, Zhixuan Cheng, et al. · ACS Applied Materials & Interfaces · 13

Large‐Scale N‐Type FET and Homogeneous CMOS Inverter Array Based on Few‐Layer MoTe 2

2023 · Zhixuan Cheng, Xionghui Jia, et al. · Advanced Electronic Materials · 11

Optical Helicity and Polarization Dependent NIR Negative Photocurrent in the 2D Magnetic Semiconductor CrI 3

2023 · Jiamin Chen, Xing Cheng, et al. · Advanced Optical Materials · 10

Large‐Scale p‐Type Nonvolatile FGFET Memory Array Based on 2H‐MoTe2

2024 · Minglai Li, Zhixuan Cheng, et al. · Advanced Electronic Materials · 6

Programmable 2H-MoTe 2 FGFET-Based CMOS Array

2025 · Minglai Li, Zhixuan Cheng, et al. · Nano Letters · 5

Spin-Enhanced Self-Powered Light Helicity Detecting Based on Vertical WSe2–CrI3 p–n Heterojunction

2024 · Jiamin Chen, Zhixuan Cheng, et al. · ACS Nano · 5

All-2D vertical metal-semiconductor field-effect transistor with sub-10 nm channel and contact lengths

2026 · Yi Zhang, Xionghui Jia, et al. · Nature Communications · 1

Works count: 16

Citation count: 291

H-index: 11

I10-index: 12