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Noriyuki Fuutagawa

OpenAlex ID: A5025072405
High-Power (over 100 mW) Green Laser Diodes on Semipolar $\{20\bar{2}1\}$ GaN Substrates Operating at Wavelengths beyond 530 nm
2012 · Shimpei Takagi, Yohei Enya, et al. · Applied Physics Express · 122
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Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers fabricated using epitaxial lateral overgrowth
2015 · Shouichiro Izumi, Noriyuki Fuutagawa, et al. · Applied Physics Express · 96
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Watt‐Class Green (530 nm) and Blue (465 nm) Laser Diodes
2017 · Masahiro Murayama, Yusuke Nakayama, et al. · physica status solidi (a) · 95
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Milliwatt‐class GaN‐based blue vertical‐cavity surface‐emitting lasers fabricated by epitaxial lateral overgrowth
2016 · Tatsushi Hamaguchi, Noriyuki Fuutagawa, et al. · physica status solidi (a) · 76
Long-Lifetime True Green Laser Diodes with Output Power over 50 mW above 525 nm Grown on Semipolar $\{20\bar{2}1\}$ GaN Substrates
2012 · Katsunori Yanashima, Hiroshi Nakajima, et al. · Applied Physics Express · 48
Lateral carrier confinement of GaN-based vertical-cavity surface-emitting diodes using boron ion implantation
2016 · Tatsushi Hamaguchi, Hiroshi Nakajima, et al. · Japanese Journal of Applied Physics · 35
GaN-based Vertical-Cavity Surface-Emitting Lasers Incorporating Dielectric Distributed Bragg Reflectors
2019 · Tatsushi Hamaguchi, Hiroshi Nakajima, et al. · Applied Sciences · 25
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140-fs duration and 60-W peak power blue-violet optical pulses generated by a dispersion-compensated GaInN mode-locked semiconductor laser diode using a nonlinear pulse compressor
2015 · Shunsuke Kono, Hideki Watanabe, et al. · Optics Express · 10
Continuous wave operation of high power GaN-based blue vertical-cavity surface-emitting lasers using epitaxial lateral overgrowth
2016 · Tatsushi Hamaguchi, Noriyuki Fuutagawa, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 6
Atomic-Scale Multimodal Characterization of Self-Assembled InAs/InGaAlAs Quantum Dots
2024 · Yudai Yamaguchi, Yuta Inaba, et al. · The Journal of Physical Chemistry Letters · 5
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3D integrated 45 W peak power 2D addressable VCSEL array and laser driver for true solid-state LiDAR
2023 · Yasutaka Higa, Gyongsok Song, et al. · Vertical-Cavity Surface-Emitting Lasers · 3
Intensity Correlation Analysis on Blue-Violet FemtosecondPulses from a Dispersion-Compensated GaInN Mode-LockedSemiconductor Laser Diode
2015 · Shunsuke Kono, Rintaro Koda, et al. · Applied Sciences · 2
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3D integrated 2D addressable VCSEL array with highly uniform short pulse characteristics
2024 · Gyongsok Song, Yasutaka Higa, et al. · Vertical-Cavity Surface-Emitting Lasers · 1
Multimodal Analysis of InAs/InGaAlAs Quantum Dots Using Transmission Electron Microscopy and Atom Probe Tomography
2023 · Yudai Yamaguchi, Yuta Inaba, et al. · Microscopy and Microanalysis · 1
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Highly-efficient operation and mode control in GaN-based VCSELs with a curved mirror
2023 · Tatsushi Hamaguchi, Maiko Ito, et al. · Gallium Nitride Materials and Devices · 1
Watt-class Operation of GaN-based Blue and Green Laser Diodes
2019 · Hideki Watanabe, Yusuke Nakayama, et al. · Proceedings of the International Display Workshops · 1
Direct observation of indium compositional fluctuation in GaInN/GaN multi‐quantum wells using an X‐ray micro‐beam from the 8‐GeV storage ring
2008 · Takao Miyajima, Shigeaki Uemura, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 1
384-channel 2D-addressable blue VCSEL arrays
2026 · Masahiro Murayama, Miwako Shoji, et al. · Optical Architectures for Displays and Sensing in Augmented, Virtual, and Mixed Reality (AR, VR, MR)
High efficiency 10-micron-pitch 64x64 addressable VCSEL array with intracavity structure
2023 · Hideki Watanabe, Tatsuya Matou, et al. · Vertical-Cavity Surface-Emitting Lasers
Watt-class Green and Blue Laser Diodes
2018 · Masahiro Murayama, Yusue Nakayama, et al. · IEICE Technical Report; IEICE Tech. Rep.
Watt-Class Green Laser Diodes on Semipolar {20–21} Gallium Nitride Substrates
2018 · Masahiro Murayama, Yusuke Nakayama, et al. · IEEE International Semiconductor Laser Conference (ISLC)
Works count: 21
Citation count: 528
H-index: 8
I10-index: 8
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