Author

Shinya Ootomo

Observed names: S Ootomo, S. Ootomo, Shin-Ya Ootomo, Shin-ya Ootomo

Institutions: Furukawa Electric (Japan), Furukawa Co., Ltd. (Japan)

Observed institutions: Hokkaido University, Furukawa Electric (Japan), Furukawa Co., Ltd. (Japan), Research Center for Integrated Quantum Electronics, Hokkaido University

OpenAlex ID: A5025455975

Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric

2003 · Tamotsu Hashizume, Shinya Ootomo, et al. · Applied Physics Letters · 265

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Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors

2003 · Hideki Hasegawa, Takanori Inagaki, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 240

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Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors

2003 · Tamotsu Hashizume, Shinya Ootomo, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 234

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Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures

2001 · Tamotsu Hashizume, Shinya Ootomo, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 167

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Over 100A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage

2010 · Hiroshi Kambayashi, Yoshihiro Satoh, et al. · Solid-State Electronics · 147

Normally Off n-Channel GaN MOSFETs on Si Substrates Using an SAG Technique and Ion Implantation

2007 · Hiroshi Kambayashi, Yuki Niiyama, et al. · IEEE Electron Device Letters · 59

Surface passivation of GaAs by ultra-thin cubic GaN layer

2000 · Sanguan Anantathanasarn, Shin-ya Ootomo, et al. · Applied Surface Science · 44

X-ray photoelectron spectroscopy characterization of AlGaN surfaces exposed to air and treated in NH4OH solution

2000 · Tamotsu Hashizume, Shin-ya Ootomo, et al. · Applied Physics Letters · 39

High‐quality SiO2/GaN interface for enhanced operation field‐effect transistor

2007 · Yuki Niiyama, Tatsuyuki Shinagawa, et al. · physica status solidi (a) · 28

Mapping of dopant concentration in a GaAs semiconductor by off-axis phase-shifting electron holography

2006 · H. Sasaki, K. Yamamoto, et al. · Applied Physics Letters · 28

Surface characterization of GaN and AlGaN layers grown by MOVPE

2001 · T. Hashizume, R. Nakasaki, et al. · Materials Science and Engineering B · 28

Normally off operation GaN-based MOSFETs for power electronics applications

2010 · Yuki Niiyama, Shinya Ootomo, et al. · Semiconductor Science and Technology · 24

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A Novel Thin Al 2 O 3 Gate Dielectric by ECR‐Plasma Oxidation of Al for AlGaN/GaN Insulated Gate Heterostructure Field‐Effect Transistors

2002 · S. Ootomo, T. Hashizume, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 24

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Over 2 A Operation at 250 °C of GaN Metal–Oxide–Semiconductor Field Effect Transistors on Sapphire Substrates

2008 · Yuki Niiyama, Hiroshi Kambayashi, et al. · Japanese Journal of Applied Physics · 23

250°C operation normally-off GaN MOSFETs

2007 · Yuki Niiyama, Hiroshi Kambayashi, et al. · Solid-State Electronics · 23

Si Ion Implantation into Mg-Doped GaN for Fabrication of Reduced Surface Field Metal–Oxide–Semiconductor Field-Effect Transistors

2008 · Yuki Niiyama, Shinya Ootomo, et al. · Japanese Journal of Applied Physics · 22

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Al 2 O 3 ‐based surface passivation and insulated gate structure for AlGaN/GaN HFETs

2003 · Tamotsu Hashizume, Shinya Ootomo, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 22

Normally-Off Operation GaN Based MOSFETs for Power Electronics

2009 · Yuki Niiyama, Shinya Ootomo, et al. · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium · 17

Surface Passivation of AlGaN/GaN Heterostructures Using an Ultrathin Al2O3 Layer

2001 · S. Ootomo, T. Hashizume, et al. · physica status solidi (a) · 17

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SIMS analysis of a multiple quantum well structure in a vertical cavity surface emitting laser using the mixing-roughness-information depth model

2006 · S. Ootomo, H. Maruya, et al. · Applied Surface Science · 9

Over 1500 V/2 A operation of GaN RESURF-MOSFETs on sapphire substrate

2009 · Y. Niiyama, H. Kambayashi, et al. · Electronics Letters · 8

Nitridation of GaP (100) Surfaces by rf Nitrogen Radicals and by Electron Cyclotron Resonance Nitrogen Plasma

2000 · Shin-ya Ootomo, Tamotsu Hashizume, et al. · Japanese Journal of Applied Physics · 7

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