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B. Green

Observed name: Green, B.
Institution: NXP (Germany)
Observed institution: NXP (Germany)
OpenAlex ID: A5025577217
High Performance 150 mm RF GaN Technology with Low Memory Effects
2020 · K. Moore, B. Green, et al. · IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) · 7
High Power, Broadband, Linear, Solid State Amplifier.
1998 · Lester F. Eastman, N. Weimann, et al. · 4
High Performance $0.25\mu\mathrm{m}$ GaN Technology with Low Memory Effects
2023 · B. Grote, B. Green, et al. · IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) · 1
150 mm RF GaN Technology for Commercial RF Applications (Invited)
2021 · B. Green, K. Moore, et al. · IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
A Gan on Sic Hfet Device Technology for Wireless Infrastructure Applications
2007 · B. Green, H. Henry, et al.
A Gan on Sic Hfet Device Technology for Wireless Infrastructure Applications
2007 · B. Green, H. Henry, et al. · International Journal of High Speed Electronics and Systems
Works count: 7
Citation count: 12
H-index: 2
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