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Temel H. Buyuklimanli

Observed names: T Buyuklimanli, T. BUYUKLIMANLI, T. Buyuklimanli, T. Büyüklimanli, T. H. Buyuklimanli, T. H. Büyüklimanli, T. H. Büyüklimanli, T.H. Buyuklimanli, T.H. Büyüklimanli, Temel Buyuklimanli, Temel Büyüklimanli, Temel Büyüklimanli, Temel Büyüklimanlı, Temel H. Büyüklimanli
Observed institutions: Pennsylvania State University, Princeton University, University of Florida, Evans Analytical Group (United States), Eurofins (United States), Eurofins (France)
ORCID: 0000-0002-2009-5452
Observed ORCID: 0000-0002-2009-5452
OpenAlex ID: A5025603845
Characterization of sol-gel deposited niobium pentoxide films for electrochromic devices
1995 · Nilgün Özer, Timothy Barreto, et al. · Solar Energy Materials and Solar Cells · 88
Hydrogen plasma enhanced crystallization of hydrogenated amorphous silicon films
1999 · K. Pangal, J. C. Sturm, et al. · Journal of Applied Physics · 76
Accurate measurements of the intrinsic diffusivities of boron and phosphorus in silicon
2000 · Yaser M. Haddara, Brennan T. Folmer, et al. · Applied Physics Letters · 74
Suppression of boron outdiffusion in SiGe HBTs by carbon incorporation
2002 · L.D. Lanzerotti, J.C. Sturm, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 61
Suppression of boron transient enhanced diffusion in SiGe heterojunction bipolar transistors by carbon incorporation
1997 · L. D. Lanzerotti, J. C. Sturm, et al. · Applied Physics Letters · 55
Analytical Model for Redistribution Profile of Ion-Implanted Impurities During Solid-Phase Epitaxy
2007 · Kunihiro Suzuki, Yuji Kataoka, et al. · IEEE Transactions on Electron Devices · 45
A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing
2014 · Y.-J. Lee, T.-C. Cho, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 42
Errors in near-surface and interfacial profiling of boron and arsenic
2004 · W Vandervorst, T Janssens, et al. · Applied Surface Science · 42
Surface degradation of YBa2 Cu3 O7−δ superconductors on exposure to air and humidity
1991 · Temel H. Büyüklimanli, Joseph H. Simmons · Physical review. B, Condensed matter · 36
Complete suppression of boron transient-enhanced diffusion and oxidation-enhanced diffusion in silicon using localized substitutional carbon incorporation
1998 · M. S. Carroll, C-L. Chang, et al. · Applied Physics Letters · 35
Phosphorus Doping and Sharp Profiles in Silicon and Silicon-Germanium Epitaxy by Rapid Thermal Chemical Vapor Deposition
2000 · Min Yang, Malcolm Carroll, et al. · Journal of The Electrochemical Society · 29
Kinetics of nitrogen incorporation at the SiO2/4H-SiC interface during an NO passivation
2014 · Zengjun Chen, Yi Xu, et al. · Applied Surface Science · 28
Screening of Oxide/GaAs Interfaces for MOSFET Applications
2008 · M. Passlack, R. Droopad, et al. · IEEE Electron Device Letters · 26
SIMS analyses of ultra-low-energy B ion implants in Si: Evaluation of profile shape and dose accuracy
2007 · C.W. Magee, R.S. Hockett, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 21
Near-surface secondary-ion-mass-spectrometry analyses of plasma-based B ion implants in Si
2006 · T. H. Buyuklimanli, C. W. Magee, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 19
Maximum Active Concentration of Ion-Implanted Phosphorus During Solid-Phase Epitaxial Recrystallization
2007 · Kunihiro Suzuki, Yoko Tada, et al. · IEEE Transactions on Electron Devices · 15
XPS studies of polyhedral linkages in binary fluoride films
1990 · Temel H. Büyüklimanli, Joseph H. Simmons · Journal of Non-Crystalline Solids · 15
Extended Depth Profiling With the Iap
1986 · S. D. WALCK, T. BUYUKLIMANLI, et al. · Le Journal de Physique Colloques · 13
Energy dependence of transient enhanced diffusion and defect kinetics
2000 · Hugo Saleh, Mark E. Law, et al. · Applied Physics Letters · 12
High-resolution depth profiling of ultrashallow boron implants in silicon using high-resolution RBS
2003 · Kenji Kimura, Yukitoshi Oota, et al. · Current Applied Physics · 10
Quantification of SIMS data for multicomponent glasses
1994 · V. J. Bojan, T. H. Büyüklimanli, et al. · Surface and Interface Analysis · 9
Plasma implanted ultra shallow junction boron depth profiles: Effect of plasma chemistry and sheath conditions
2006 · Steve Walther, Ludovic Godet, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 7
Improved near surface characterization of shallow arsenic distribution by SIMS depth profiling
2004 · Temel H. Büyüklimanli, John W. Marino, et al. · Applied Surface Science · 7
Secondary ion mass spectrometry quantification: Do you remember when a factor of 2 was good enough?
2023 · Charles W. Magee, Temel H. Buyuklimanli · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 6
Boosting Ge-Epi P-Well Mobility & Crystal Quality with Si or Sn Implantation and Melt Annealing
2018 · John O Borland, Shang-Shuin Chaung, et al. · ECS Transactions · 6
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Works count: 59
Citation count: 820
H-index: 15
I10-index: 20
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