Author

Ekta Goel

Institution: National Institute of Technology Warangal

Observed institutions: National Institute of Technology Warangal, Indian Institute of Technology BHU, Banaras Hindu University

ORCID: 0000-0002-6547-8924

Observed ORCID: 0000-0002-6547-8924

OpenAlex ID: A5025723061

2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure

2017 · Sanjay Kumar, Ekta Goel, et al. · IEEE Transactions on Electron Devices · 185

A Compact 2-D Analytical Model for Electrical Characteristics of Double-Gate Tunnel Field-Effect Transistors With a SiO2/High- $k$ Stacked Gate-Oxide Structure

2016 · Sanjay Kumar, Ekta Goel, et al. · IEEE Transactions on Electron Devices · 162

2-D Analytical Modeling of Threshold Voltage for Graded-Channel Dual-Material Double-Gate MOSFETs

2016 · Ekta Goel, Sanjay Kumar, et al. · IEEE Transactions on Electron Devices · 114

Analytical Modeling of Channel Potential and Threshold Voltage of Double-Gate Junctionless FETs With a Vertical Gaussian-Like Doping Profile

2016 · Balraj Singh, Deepti Gola, et al. · IEEE Transactions on Electron Devices · 85

2-D Analytical Drain Current Model of Double-Gate Heterojunction TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure

2017 · Sanjay Kumar, Kunal Singh, et al. · IEEE Transactions on Electron Devices · 76

2-D Analytical Threshold Voltage Model for Dielectric Pocket Double-Gate Junctionless FETs by Considering Source/Drain Depletion Effect

2017 · Balraj Singh, Deepti Gola, et al. · IEEE Transactions on Electron Devices · 49

Dielectric pocket double gate junctionless FET: a new MOS structure with improved subthreshold characteristics for low power VLSI applications

2016 · Balraj Singh, Deepti Gola, et al. · Journal of Computational Electronics · 49

Bandgap graded perovskite solar cell for above 30% efficiency

2022 · J. Lakshmi Prasanna, Ekta Goel, et al. · Optik · 33

Analytical modeling of subthreshold characteristics of ion-implanted symmetric double gate junctionless field effect transistors

2016 · Balraj Singh, Deepti Gola, et al. · Materials Science in Semiconductor Processing · 28

Ferro-electric stacked gate oxide heterojunction electro-statically doped source/drain double-gate tunnel field effect transistors: A superior structure

2017 · Balraj Singh, Trailokya Nath Rai, et al. · Materials Science in Semiconductor Processing · 25

Efficient modeling of double absorber layered structure in perovskite solar cells using machine learning techniques

2023 · J Lakshmi Prasanna, Ekta Goel, et al. · Physica Scripta · 19

Reduced interfacial recombination in perovskite solar cells by structural engineering simulation

2022 · J Lakshmi Prasanna, Ekta Goel, et al. · Journal of Optics · 17

Analytical modeling of subthreshold current and subthreshold swing of Gaussian-doped strained-Si-on-insulator MOSFETs

2014 · Gopal Rawat, Sanjay Kumar, et al. · Journal of Semiconductors · 17

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Analysis of Negative Capacitance Source Pocket Double-Gate TFET with Steep Subthreshold and High ON–OFF Ratio

2024 · K. Murali Chandra Babu, Ekta Goel · Journal of Electronic Materials · 16

Numerical investigation of MAPbI3 perovskite solar cells for performance limiting parameters

2023 · J. Lakshmi Prasanna, Ekta Goel, et al. · Optical and Quantum Electronics · 16

Two-dimensional model for subthreshold current and subthreshold swing of graded-channel dual-material double-gate (GCDMDG) MOSFETs

2017 · Ekta Goel, Sanjay Kumar, et al. · Superlattices and Microstructures · 16

Evolution of Tunnel Field Effect Transistor for Low Power and High Speed Applications: A Review

2022 · K. Murali Chandra Babu, Ekta Goel · Silicon · 14

Analytical threshold voltage modeling of ion-implanted strained-Si double-material double-gate (DMDG) MOSFETs

2016 · Ekta Goel, Balraj Singh, et al. · Indian Journal of Physics · 14

A comprehensive analysis of SNSFET, HS-NSFET and PHS-NSFET: Temperature and channel doping perspective

2025 · M. Balasubrahmanyam, Ekta Goel · Micro and Nanostructures · 11

Defect Density-Dependent Dynamics of Double Absorber Layered Perovskite Solar Cell

2024 · Jagupilla Lakshmi Prasanna, Ekta Goel, et al. · IEEE photonics journal · 11

Analytical Modeling of Threshold Voltage of Ion-Implanted Strained-Si-on-Insulator (SSOI) MOSFETs

2014 · Gopal Rawat, Ekta Goel, et al. · Journal of Nanoelectronics and Optoelectronics · 11

A Simulation Study of the Effect of Trap Charges and Temperature on Performance of Dual Metal Strip Double Gate TFET

2023 · Korra Nikhil, K Murali Chandra Babu, et al. · Silicon · 9

Review of nanomaterials impact on improving the performance of dye-sensitized and perovskite solar cells

2022 · J. Lakshmi Prasanna, Ekta Goel, et al. · Optical and Quantum Electronics · 9

Analytical Modeling of Potential Distribution and Threshold Voltage of Gate Underlap DG MOSFETs with a Source/Drain Lateral Gaussian Doping Profile

2016 · Kunal Singh, Mirgender Kumar, et al. · Journal of Electronic Materials · 9

DC and RF Performance Optimization of Source Pocket Designed Hybrid-Dielectric Vertical Nanowire Tunnel-FET: Low Power Perspective

2024 · Swaroop Kumar Macherla, Ekta Goel, et al. · ECS Journal of Solid State Science and Technology · 7

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Works count: 78

Citation count: 1,114

H-index: 16

I10-index: 21