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C. H. Liu

Observed names: C H Liu, C.H Liu, C.H. Liu
OpenAlex ID: A5025924176
Nitride-based LEDs fabricated on patterned sapphire substrates
2003 · S.J. Chang, Y.C. Lin, et al. · Solid-State Electronics · 99
n-UV+Blue/Green/Red White Light Emitting Diode Lamps
2003 · Cheng-Huang Kuo, Jinn-Kong Sheu, et al. · Japanese Journal of Applied Physics · 95
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Nitride-based light-emitting diodes with Ni/ITO p-type ohmic contacts
2002 · Y.C. Lin, S.J. Chang, et al. · IEEE Photonics Technology Letters · 90
Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes
2003 · S.J. Chang, C.H. Chen, et al. · IEEE Electron Device Letters · 66
Improved light output power of InGaN/GaN MQW LEDs by lower temperature p-GaN rough surface
2004 · C.H. Liu, R.W. Chuang, et al. · Materials Science and Engineering B · 61
High brightness green light emitting diodes with charge asymmetric resonance tunneling structure
2002 · C.H. Chen, Y.K. Su, et al. · IEEE Electron Device Letters · 52
${\rm Ga}_{2}{\rm O}_{3}$ Nanowire Photodetector Prepared on ${\rm SiO}_{2}/{\rm Si}$ Template
2013 · Y. L. Wu, Shoou-Jinn Chang, et al. · IEEE Sensors Journal · 43
Effects of O2 thermal annealing on the properties of CVD Ta2O5 thin films
2002 · J.S Lee, S.J Chang, et al. · Materials Chemistry and Physics · 43
InGaN/GaN light-emitting diodes with ITO p-contact layers prepared by RF sputtering
2003 · C S Chang, S J Chang, et al. · Semiconductor Science and Technology · 41
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SiNx deposited by in-line PECVD for multi-crystalline silicon solar cells
2005 · M.C. Wei, S.J. Chang, et al. · Solar Energy · 26
GaN-Based LEDs With a Chirped Multiquantum Barrier Structure
2012 · Yu-Yao Lin, Ricky W. Chuang, et al. · IEEE Photonics Technology Letters · 25
ZnSTeSe metal-semiconductor-metal photodetectors
2002 · S.J. Chang, Y.K. Su, et al. · IEEE Photonics Technology Letters · 24
GaAs MOS capacitors with photo-CVD SiO2 insulator layers
2005 · C.H. Liu, T.K. Lin, et al. · Solid-State Electronics · 22
Improved performance of GaN-based Schottky barrier photodetectors by annealing Ir/Pt Schottky contact in O2
2010 · P.C. Chang, Y.K. Su, et al. · Journal of Alloys and Compounds · 19
High-Detectivity Nitride-Based MSM Photodetectors on InGaN–GaN Multiquantum Well With the Unactivated Mg-Doped GaN Layer
2007 · Ping-Chuan Chang, C. L. Yu, et al. · IEEE Journal of Quantum Electronics · 19
GaN-Based Planar p-i-n Photodetectors With the Be-Implanted Isolation Ring
2013 · Jei-Li Hou, Shoou-Jinn Chang, et al. · IEEE Transactions on Electron Devices · 17
High-quality ultrathin chemical-vapor-deposited Ta2O5 capacitors prepared by high-density plasma annealing
2003 · C.H Liu, S.J Chang, et al. · Materials Science and Engineering B · 16
Low-Noise and High-Detectivity GaN-Based UV Photodiode With a Semi-Insulating Mg-Doped GaN Cap Layer
2007 · P. C. Chang, C. L. Yu, et al. · IEEE Sensors Journal · 15
Nitride-based green light emitting diodes grown by temperature ramping
2003 · C.H. Liu, Y.K. Su, et al. · Journal of Crystal Growth · 15
Tunnelling efficiency of n -InGaN/GaN short period superlattice tunnelling contact layer for nitride-based light emitting diodes
2003 · C H Liu, Y K Su, et al. · Semiconductor Science and Technology · 14
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GaN-Based Power Flip-Chip LEDs With an Internal ESD Protection Diode on Cu Sub-Mount
2010 · Y X Sun, W S Chen, et al. · IEEE Transactions on Advanced Packaging · 11
High transconductance nitride MOSHFETs
2004 · C.H Liu, C.K Wang, et al. · Materials Science and Engineering B · 11
ZnCdSeTe-based orange light-emitting diode
2002 · W.R. Chen, S.J. Chang, et al. · IEEE Photonics Technology Letters · 11
Kinetics of persistent photoconductivity in InGaN epitaxial films grown by MOCVD
2006 · H. Hung, C.H. Chen, et al. · Journal of Crystal Growth · 9
The characteristics of photo-CVD SiO2 and its application on SiC MIS UV photodetectors
2003 · C.H. Liu, C.S. Chang, et al. · Materials Science and Engineering B · 9
Works count: 48
Citation count: 942
H-index: 16
I10-index: 23
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