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Surani Bin Dolmanan

Observed names: Bin Dolmanan Surani, Dolmanan, Surani B., S B Dolmanan, S. B. Dolmanan, S. Bin Dolmanan, S. Dolmanan, S.B. Dolmanan, Surani B. Dolmanan, Surani Bin-Dolmanan, Surani Dolmanan, Surani bin Dolmanan, Surani-bin Dolmanan, Surani‐bin Dolmanan
Observed institutions: Agency for Science, Technology and Research, National University of Singapore, Nanyang Technological University, Institute of Materials Research and Engineering, GlobalFoundries (Singapore), The Ohio State University
ORCID: 0000-0002-6492-1592
Observed ORCID: 0000-0002-6492-1592
OpenAlex ID: A5026060893
AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)
2012 · S. Tripathy, Vivian K. X. Lin, et al. · Applied Physics Letters · 112
Evidence for Distinct Active Sites on Oxide-Derived Cu for Electrochemical Nitrate Reduction
2024 · Jiguang Zhang, Linrong Huang, et al. · Journal of the American Chemical Society · 109
Design and Synthesis of Polymer-Functionalized NIR Fluorescent Dyes–Magnetic Nanoparticles for Bioimaging
2013 · Swee Kuan Yen, Dominik Jańczewski, et al. · ACS Nano · 108
Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate
2017 · Adarsh Nigam, Thirumaleshwara N. Bhat, et al. · AIP Advances · 91
Patterning at the Resolution Limit of Commercial Electron Beam Lithography
2022 · Mohammad S. M. Saifullah, Mohamed Asbahi, et al. · Nano Letters · 75
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Real time detection of Hg2+ ions using MoS2 functionalized AlGaN/GaN high electron mobility transistor for water quality monitoring
2020 · Adarsh Nigam, Neeraj Goel, et al. · Sensors and Actuators B Chemical · 73
Influence of stress on structural properties of AlGaN/GaN high electron mobility transistor layers grown on 150 mm diameter Si (111) substrate
2013 · H. F. Liu, S. B. Dolmanan, et al. · Journal of Applied Physics · 65
Degradation mechanism of ZnO-based dye-sensitized solar cells
2009 · Lin Ke, Surani Bin Dolmanan, et al. · Solar Energy Materials and Solar Cells · 50
Influence of catalytic gold and silver metal nanoparticles on structural, optical, and vibrational properties of silicon nanowires synthesized by metal-assisted chemical etching
2012 · M. K. Dawood, S. Tripathy, et al. · Journal of Applied Physics · 49
MPA-GSH Functionalized AlGaN/GaN High-Electron Mobility Transistor-Based Sensor for Cadmium Ion Detection
2019 · Adarsh Nigam, Thirumaleshwara N. Bhat, et al. · IEEE Sensors Journal · 48
Acidic Media Impedes Tandem Catalysis Reaction Pathways in Electrochemical CO2 Reduction
2023 · Ning Ling, Jiguang Zhang, et al. · Angewandte Chemie International Edition · 46
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Ethylene electrosynthesis at low voltages enabled by dopant-induced modulation of the rate-determining step
2025 · Qin Yang, Xiu Wang, et al. · Nature Synthesis · 41
MoS2 functionalized AlGaN/GaN transistor based room temperature NO2 gas sensor
2022 · Nipun Sharma, Sumit Kumar, et al. · Sensors and Actuators A Physical · 37
Linear and Circular AlGaN/AlN/GaN MOS-HEMT-based pH Sensor on Si Substrate: A Comparative Analysis
2019 · Arathy Varghese, Chinnamuthan Periasamy, et al. · IEEE Sensors Letters · 37
Local microenvironment tuning induces switching between electrochemical CO 2 reduction pathways
2023 · Surani Bin Dolmanan, Annette Böhme, et al. · Journal of Materials Chemistry A · 34
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High-Frequency Microwave Noise Characteristics of InAlN/GaN High-Electron Mobility Transistors on Si (111) Substrate
2014 · S. Arulkumaran, K. Ranjan, et al. · IEEE Electron Device Letters · 34
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Sensitive and Selective Detection of Pb2+ Ions Using 2,5-Dimercapto-1,3,4-Thiadiazole Functionalized AlGaN/GaN High Electron Mobility Transistor
2019 · Adarsh Nigam, Vijendra Singh Bhati, et al. · IEEE Electron Device Letters · 31
Low frequency noise analysis on organic thin film transistors
2008 · Lin Ke, Surani Bin Dolmanan, et al. · Journal of Applied Physics · 31
Influence of PECVD deposited SiN x passivation layer thickness on In 0.18 Al 0.82 N/GaN/Si HEMT
2015 · Sarab Preet Singh, Yi Liu, et al. · Journal of Physics D Applied Physics · 29
Record-low contact resistance for InAlN/AlN/GaN high electron mobility transistors on Si with non-gold metal
2015 · Subramaniam Arulkumaran, Geok Ing Ng, et al. · Japanese Journal of Applied Physics · 24
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Investigation of the Device Degradation Mechanism in Pentacene-Based Thin-Film Transistors Using Low-Frequency-Noise Spectroscopy
2010 · Lin Ke, Surani Bin Dolmanan, et al. · IEEE Transactions on Electron Devices · 23
Coconut husk-derived biochar for enhancing electrochemical conversion of CO2
2023 · Y.C. Tan, S. Jia, et al. · Materials Today Chemistry · 21
Electron velocity of 6 × 107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors
2015 · S. Arulkumaran, G. I. Ng, et al. · Applied Physics Letters · 21
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Dielectric Engineering of HfO 2 Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon Substrates
2018 · Hareesh Chandrasekar, Sandeep Kumar, et al. · IEEE Transactions on Electron Devices · 20
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In0.17Al0.83N/AlN/GaN Triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03 A/mm, IOFF=1.13 µA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V
2014 · S. Arulkumaran, G. I. Ng, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 20
Works count: 79
Citation count: 1,595
H-index: 21
I10-index: 44
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