Author

Hideaki Minagawa

Observed names: MINAGAWA, H., Minagawa, Hideaki

Institution: Ion Technology Center (Japan)

Observed institutions: Kyoto University, Ion Technology Center (Japan)

ORCID: 0000-0002-3864-7497

Observed ORCID: 0000-0002-3864-7497

OpenAlex ID: A5026938600

Effective combinations of features in predicting the range of incident ions using machine learning

2024 · Hideaki Minagawa, Tomoya Tezuka, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 8

Optical activation of implanted lanthanoid ions in aluminum nitride semiconductors by high temperature annealing

2024 · Shin-ichiro Sato, Kanako Shojiki, et al. · Optical Materials Express · 4

In situ X-ray diffraction study of irradiation-induced lattice expansion in Al foils by MeV-energy heavy ions

2016 · Hideaki Minagawa, Hidetsugu Tsuchida, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 4

Experimental study on tilt and dose dependence and a proposal for a simplified model for simulation in magnesium channeled implantation into GaN (0001)

2025 · Atsushi Suyama, Hideaki Minagawa, et al. · Japanese Journal of Applied Physics · 2

Possibility of the existence of a topological defect in dynamic deformation of the free-standing ultrathin silicon wafer during MeV ion irradiation

2022 · Hideaki Minagawa, Hidetsugu Tsuchida · Journal of Applied Physics · 2

Optical activation of praseodymium ions implanted in gallium nitride after ultra-high pressure annealing

2023 · Shin Ito, Shin-ichiro Sato, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1

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Ion Implantation Simulation by Marlowe

2026 · AOKI, M., MINAGAWA, H., et al. · Institutional Repositories DataBase (IRDB)

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Room temperature electroluminescence of Pr-implanted GaN p-n junction diode

2025 · Ito Shin, Sato Shinichiro, et al. · Institutional Repositories DataBase (IRDB)

Room temperature electroluminescence of Pr-implanted GaN p-n junction diode

2025 · Shin Ito, Sato Shinichiro, et al. · Institutional Repositories DataBase (IRDB)

Optical and Structural Properties of Praseodymium-Implanted AlN Films

2023 · Kanako Shojiki, Sato Shinichiro, et al. · Institutional Repositories DataBase (IRDB)

Effect of beam flux on radiation damage accumulation in ion-bombarded Si

2018 · Hideaki Minagawa, Shunsuke Nakanishi, et al. · JJAP Conference Proceedings

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Works count: 12

Citation count: 21

H-index: 3

I10-index: