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Akihiro Suzuki

ORCID: 0000-0002-1637-0407
Observed ORCID: 0000-0002-1637-0407
OpenAlex ID: A5027114556
Hydrogen passivation for reduction of SiO2/Si interface state density using hydrocarbon-molecular-ion-implanted silicon wafers
2020 · Ryosuke Okuyama, Takeshi Kadono, et al. · Japanese Journal of Applied Physics · 22
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Reduction of Dark Current in CMOS Image Sensor Pixels Using Hydrocarbon-Molecular-Ion-Implanted Double Epitaxial Si Wafers
2020 · Ayumi Onaka-Masada, Takeshi Kadono, et al. · Sensors · 14
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Silicon Wafer Gettering Design for Advanced CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation: A Review
2021 · Kazunari Kurita, Takeshi Kadono, et al. · IEEE Journal of the Electron Devices Society · 13
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Proximity gettering design of silicon wafers using silicon hydride and hydrocarbon mixture molecular ion implantation technique
2021 · Ryo Hirose, Takeshi Kadono, et al. · Materials Science in Semiconductor Processing · 8
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Recrystallization model of discrete amorphous regions in C3H5-molecular-ion-implanted silicon substrate surface analyzed by X-ray photoelectron spectroscopy
2022 · Koji Kobayashi, Ryosuke Okuyama, et al. · Japanese Journal of Applied Physics · 6
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Influence of oxygen on copper gettering in hydrocarbon molecular ion implanted region using atom probe tomography
2020 · Satoshi Shigematsu, Ryosuke Okuyama, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 5
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Photoemission Spectroscopy Study on Hydrogen Termination Effect on SiO2/Si Structure Fabricated Using H+-Implanted Si Substrate
2020 · Akihiro Suzuki, Kazutoshi Takahashi, et al. · Journal of The Electrochemical Society · 5
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Fundamental Characteristics of Cyanide‐Related Multielement Molecular Ion‐Implanted Epitaxial Si Wafers for High‐Performance CMOS Image Sensors
2019 · Akihiro Suzuki, Takeshi Kadono, et al. · physica status solidi (a) · 5
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Molecular and Atomic Hydrogen Diffusion Behavior by Reaction Kinetic Analysis in Projection Range of Hydrocarbon Molecular Ion for CMOS Image Sensors
2019 · Ryosuke Okuyama, Ayumi Onaka‐Masada, et al. · physica status solidi (a) · 4
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RF Magnetron-Sputtered Si-Rich SiO2 Films on GdTbFe
1988 · Akihiro Suzuki, Riki Matsuda, et al. · Japanese Journal of Applied Physics · 4
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Influence of carbon on Ni gettering in C2Hx+ and SiHy+ mixture molecular-ion-implanted silicon epitaxial wafer
2024 · Ryo Hirose, Ayumi Onaka-Masada, et al. · Materials Science in Semiconductor Processing · 3
Kinetic Monte Carlo Simulations for Recrystallization Process of Discrete Amorphous Regions in C3 H5-Molecular-Ion-Implanted Silicon Substrate Surface
2023 · Koji Kobayashi, Ryosuke Okuyama, et al. · International Workshop on Junction Technology · 3
Re-crystallization Behavior of Amorphous Layer in Hydrocarbon Molecular Ion Implanted Region Using Flash Lamp Annealing
2018 · Koji Kobayashi, Ryosuke Okuyama, et al. · International Conference on Ion Implantation Technology · 3
Interface trap density evaluation of off-angle Si(110)/SiO 2 MOS structures
2026 · Ryotaro Shimura, Eishin Nako, et al. · Japanese Journal of Applied Physics · 2
Reduction of White Spot Defects in CMOS Image Sensors Fabricated Using Epitaxial Silicon Wafer with Proximity Gettering Sinks by CH2P Molecular Ion Implantation
2022 · Takeshi Kadono, Ryo Hirose, et al. · Sensors · 2
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Recrystallization kinetics of fully amorphized C3H5-molecular-ion-implanted silicon substrate surface
2025 · Koji Kobayashi, Ryosuke Okuyama, et al. · MRS Advances · 1
Surface Recrystallization Model of Fully Amorphized C3H5-Molecular-Ion-Implanted Silicon Substrate
2024 · Koji Kobayashi, Ryosuke Okuyama, et al. · Crystals · 1
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Two- and Three-Dimensional Recrystallization of Discrete Amorphous in C3H5-Molecular-Ion-Implanted Silicon Surface Analyzed by TCAD Simulation
2024 · Koji Kobayashi, Ryosuke Okuyama, et al. · ECS Journal of Solid State Science and Technology · 1
TEM Image Analysis and Simulation Physics for Two-Step Recrystallization of Discretely Amorphized C3H5-Molecular-Ion-Implanted Silicon Substrate Surface
2024 · Koji Kobayashi, Ryosuke Okuyama, et al. · Crystals · 1
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Hydrogen Termination Effect on SiO2/Si Interface State Defects of Silicon Hydride and Hydrocarbon Hybrid-Molecular-Ion-Implanted Silicon Epitaxial Wafer
2023 · Ryosuke Okuyama, Takeshi Kadono, et al. · International Workshop on Junction Technology · 1
In Situ Transmission Electron Microscopy Study of Shrinkage Kinetics of CH4N-Molecular-Ion-Implantation-Induced Extended Defects
2022 · Akihiro Suzuki, Takeshi Kadono, et al. · Journal of The Electrochemical Society · 1
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Hydrogen diffusion behavior in CH2P-molecular-ion-implanted silicon wafers for CMOS image sensors
2021 · Ryosuke Okuyama, Takeshi Kadono, et al. · Materials Science in Semiconductor Processing · 1
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Effect of ramping up rate on end of range defect in multielement molecular-ion (CH3O)-implanted silicon wafers
2019 · Ryo Hirose, Ayumi Onaka-Masada, et al. · Japanese Journal of Applied Physics · 1
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Crystallographic dependence of SiOX transition layer evolution during native oxide formation on silicon surfaces
2026 · Nawaphorn Kuhakongkiat, Ryo Yokogawa, et al. · Applied Surface Science Advances
Boosting CMOS Image Sensors: Exploring Silicon Hydride and Hydrocarbon Molecular Ion Implanted in Epitaxial Wafers
2026 · Ayumi Onaka-Masada, Ryo Hirose, et al. · Sensors
Works count: 47
Citation count: 107
H-index: 5
I10-index: 3
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