Author

L. H. Grober

Observed names: L. Grober, Louise Grober, Louise H. Grober

Institutions: Yale University, Southern Connecticut State University

Observed institutions: AT&T (United States), Yale University, Southern Connecticut State University

OpenAlex ID: A5027192490

Gallium arsenide deep-level optical emitter for fibre optics

2003 · Janet L. Pan, Joseph E. McManis, et al. · Nature Materials · 31

Interfacial characteristics of AlGaAs after in situ electron cyclotron resonance plasma etching and molecular beam epitaxial regrowth

1994 · M. Hong, J. P. Mannaerts, et al. · Journal of Applied Physics · 16

Gallium-arsenide deep-level tunnel diode with record negative conductance and record peak current density

2004 · Janet L. Pan, J.E. McManis, et al. · Solid-State Electronics · 11

Rapid DNA Fiber Technique for Size Measurements of Linear and Circular DNA Probes

2001 · O. Henegariu, L. Grober, et al. · BioTechniques · 11

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Buried heterostructure laser diodes fabricated using in situ processing

1994 · M. Hong, D. Vakhshoori, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 9

In-situ process for AlGaAs compound semiconductor: Materials science and device fabrication

1994 · M. Hong, K. D. Choquette, et al. · Journal of Electronic Materials · 7

Gallium-arsenide deep-level pin tunnel diode with very negative conductance

2003 · J.L. Pan, J.E. McManis, et al. · Electronics Letters · 3

The Effectiveness of Multimedia and Activity-Based Supplemental Teaching Resources in Materials Science Education

2012 · Deborah A. Day, Eeman Abbasi, et al. · MRS Proceedings · 2

Vacuum Integrated Fabrication of Buried Heterostructure Edge Emitting Laser Diodes

1993 · M. Hong, D. Vahkshoori, et al. · MRS Proceedings · 2

Interface analysis of dry etched and molecular beam epitaxial regrown AlGaAs

1994 · L. H. Grober, M. Hong, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1

ETCH Rate and Thickness Measurements of Layered GaAs, AlAs and AlGaAs Structures Using a Laser Reflectance Technique

1994 · Louise H. Grober, M. Hong, et al. · MRS Proceedings · 1

Gallium-arsenide deep-level devices for 1.55spl/mu/m fiber-optics

2004 · J.L. Pan, J.E. McManis, et al. · International Semiconductor Device Research Symposium

AlGaAs Surface Reconstruction after Cl2 Chemical Etch and Ultra High Vacuum Anneal

1994 · M. Hong, J. P. Mannaerts, et al. · MRS Proceedings

Buried AlGaAs/GaAs/InGaAs laser diodes fabricated by in-situ anisotropic etching and molecular beam epitaxy

1993 · D. Vakhshoori, Ming Cheng Hong, et al. · Conference on Lasers and Electro-Optics

Works count: 14

Citation count: 94

H-index: 6

I10-index: 4