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Roger W. Cheek

Write Strategies for 2 and 4-bit Multi-Level Phase-Change Memory
2007 · T. Nirschl, C.-F. Chen, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 276
Nanoscale electronic synapses using phase change devices
2013 · Bryan L. Jackson, Bipin Rajendran, et al. · ACM Journal on Emerging Technologies in Computing Systems · 164
Direct evidence for the amorphous silicon phase in visible photoluminescent porous silicon
1992 · J. M. Perez, J. Villalobos, et al. · Applied Physics Letters · 162
Ultra-Thin Phase-Change Bridge Memory Device Using GeSb
2006 · Y. C. Chen, C. T. Rettner, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 161
Novel Lithography-Independent Pore Phase Change Memory
2007 · M. Breitwisch, T. Nirschl, et al. · Symposium on VLSI Technology · 115
A high performance phase change memory with fast switching speed and high temperature retention by engineering the GexSbyTez phase change material
2011 · H. Y. Cheng, T. H. Hsu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 84
Novel One-Mask Self-Heating Pillar Phase Change Memory
2006 · T. Happ, S.H. Chen, et al. · Symposium on VLSI Technology · 61
A low power phase change memory using thermally confined TaN/TiN bottom electrode
2011 · J.Y. Wu, M. Breitwisch, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 55
Phase transitions in Ga–Sb phase change alloys
2012 · Simone Raoux, Anja K. König, et al. · physica status solidi (b) · 52
Endurance Improvement of Ge2Sb2Te5-Based Phase Change Memory
2009 · Chieh-Fang Chen, A. Schrott, et al. · IEEE International Memory Workshop (IMW) · 51
A thermally robust phase change memory by engineering the Ge/N concentration in (Ge, N)xSbyTe z phase change material
2012 · H. Y. Cheng, J. Y. Wu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 45
Programmable via Using Indirectly Heated Phase-Change Switch for Reconfigurable Logic Applications
2008 · K. N. Chen, L. Krusin-Elbaum, et al. · IEEE Electron Device Letters · 35
Demonstration of CAM and TCAM Using Phase Change Devices
2011 · Bipin Rajendran, Roger W. Cheek, et al. · IEEE International Memory Workshop (IMW) · 33
On the dynamic resistance and reliability of phase change memory
2008 · B. Rajendran, M-H. Lee, et al. · Symposium on VLSI Technology · 32
Understanding amorphous states of phase-change memory using Frenkel-Poole model
2009 · Y.H. Shih, M.H. Lee, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 25
Dynamic Resistance—A Metric for Variability Characterization of Phase-Change Memory
2009 · B. Rajendran, M. Breitwisch, et al. · IEEE Electron Device Letters · 24
Analytical model for RESET operation of Phase Change Memory
2008 · B. Rajendran, J. Karidis, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 22
Mechanisms of retention loss in Ge2Sb2Te5-based Phase-Change Memory
2008 · Y.H. Shih, J.Y. Wu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 22
A Novel Reconfigurable Sensing Scheme for Variable Level Storage in Phase Change Memory
2011 · Jing Li, Chao-I Wu, et al. · IEEE International Memory Workshop (IMW) · 21
A novel inspection and annealing procedure to rejuvenate phase change memory from cycling-induced degradations for storage class memory applications
2014 · W.S. Khwa, J.Y. Wu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 18
The impact of hole-induced electromigration on the cycling endurance of phase change memory
2010 · M.H. Lee, R. Cheek, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 18
Greater than 2-bits/cell MLC storage for ultra high density phase change memory using a novel sensing scheme
2015 · J.Y. Wu, W. S. Khwa, et al. · Symposium on VLSI Technology · 15
Coding for Multilevel Heterogeneous Memories
2010 · A. Jagmohan, L. A. Lastras-Montano, et al. · International Conference on Communications · 11
A method to maintain phase-change memory pre-coding data retention after high temperature solder bonding process in embedded systems
2011 · H.L. Lung, M. Breitwisch, et al. · Symposium on VLSI Technology · 10
Characterization of poly-Silicon emitter BJTs as access devices for Phase Change Memory
2009 · B. Rajendran, M. Breitwisch, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 10
Works count: 37
Citation count: 1,569
H-index: 19
I10-index: 25
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