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Robert P. Moerkirk
Observed names:
R. Moerkirk,
R. P. Moerkirk,
R.P. Moerkirk
Institutions:
United States Department of the Army,
DEVCOM Army Research Laboratory,
United States Army
Observed institutions:
United States Department of the Army,
DEVCOM Army Research Laboratory,
United States Army
OpenAlex ID:
A5027240842
Photoreflectance study of surface Fermi level in GaAs and GaAlAs
1990
·
H. Shen
, M. Dutta
, et al.
·
Applied Physics Letters
·
132
Direct measurement of piezoelectric field in a [111]B grown InGaAs/GaAs heterostructure by Franz–Keldysh oscillations
1992
·
H. Shen
, M. Dutta
, et al.
·
Applied Physics Letters
·
34
Annealing effects on heavily carbon-doped GaAs
1992
·
W. Y. Han
, Y. Lu
, et al.
·
Applied Physics Letters
·
32
Intermediate temperature molecular beam-epitaxy growth for design of large-area metal-semiconductor-metal photodetectors
1994
·
Bahram Nabet
, Arthur Paolella
, et al.
·
Applied Physics Letters
·
15
Application of superlattice bandpass filters in 10 μm infrared detection
1991
·
K. K. Choi
, M. Dutta
, et al.
·
Applied Physics Letters
·
14
Magnetron-enhanced reactive ion etching of GaAs and AlGaAs using CH4/H2/Ar
1993
·
G. F. McLane
, M. W. Cole
, et al.
·
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
·
13
The microstructure and electrical properties of nonalloyed epitaxial Au-Ge ohmic contacts to n-GaAs
1992
·
H. S. Lee
, M. W. Cole
, et al.
·
Journal of Applied Physics
·
10
Broad-bandwidth, high-responsivity intermediate growth temperature GaAs MSM photodetectors
1995
·
B.C. Tousley
, N. Davids
, et al.
·
IEEE Photonics Technology Letters
·
6
A novel technique for the study of defects using quantum wires
1994
·
Doran D. Smith
, Martin Wybourne
, et al.
·
Solid State Communications
·
3
Back-gating effect of low-temperature GaAs on a pseudomorphic modulation-doped field-effect transistor
1996
·
P. A. Folkes
, Doran Smith
, et al.
·
Applied Physics Letters
·
2
Electrical & Structural Properties of TiSi2 Films
1988
·
N.M. Ravindra
, T. Fink
, et al.
·
MRS Proceedings
·
2
Investigation of Ge, As, and Au Diffusion in Non-Alloyed Epitaxial Au-Ge Ohmic Contacts to n-GaAs Using Secondary Ion Mass Spectroscopy Backside Sputter Depth-Profiling
1991
·
H. S. LEE
, R. T. Lareau
, et al.
·
MRS Proceedings
·
1
Variation Of Growth Temperature For Improved Dynamic Range GaAs Metal-semiconductor-metal (MSM) Photodetectors
2005
·
P. Cooke
, B. Nabet
, et al.
·
IEEE/LEOS Summer Topical Meetings
Broad Bandwidth, Large Dynamic Range Intermediate Growth Temperature GaAs MSM Photodetectors
2005
·
B.C. Tousley
, N. Davids
, et al.
·
IEEE/LEOS Summer Topical Meetings
Magnetron Reactive Ion Etching of GaAs and AIGaAs in CH4/H2/Ar Plasmas.
1996
·
George F. McLane
, Paul Cooke
, et al.
Effects of annealing conditions on heavily carbon-doped InGaAs
1993
·
W. Y. Han
, L. Calderon
, et al.
·
Applied Physics Letters
Annealing effects on heavily C-doped GaAs and InGaAs films
1993
·
Weiyu Han
, L. Calderon
, et al.
·
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
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Works count:
17
Citation count:
264
H-index:
7
I10-index:
7
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