2011 · Arnaud Claudel, Yann Chowanek, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 16

Recent Advances in Surface Preparation of Silicon Carbide and other Wide Band Gap Materials

2010 · Marcin Zielinski, Catherine Moisson, et al. · Materials science forum · 16

Structural Quality, Polishing and Thermal Stability of 3C-SiC/Si Templates

2018 · Marcin Zielinski, Sylvain Monnoye, et al. · Materials science forum · 14

Growth and Characterization of Thick Polycrystalline AlN Layers by HTCVD

2011 · A. Claudel, E. Blanquet, et al. · Journal of The Electrochemical Society · 10

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Polishing and characterization of thick AlN layers grown on SiC substrates by stress control hydride vapor phase epitaxy

2006 · H. Mank, B. Amstatt, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 6

Regrowth of 3C-SiC on CMP Treated 3C-SiC/Si Epitaxial Layers

2005 · Hugues Mank, Catherine Moisson, et al. · Materials science forum · 6

Poly-SiC Characterization and Properties for SmartSiC™

2024 · Hugo Biard, Alexis Drouin, et al. · Materials science forum · 5

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Properties of self‐assembled Ga‐polar and N‐polar GaN/AlN quantum dots

2004 · N. Gogneau, E. Monroy, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 5

Checker-Board Carbonization for Control and Reduction of the Mean Curvature of 3C-SiC Layers Grown on Si(100) Substrates

2004 · Thierry Chassagne, Gabriel Ferro, et al. · Materials science forum · 5

Sic Power Diodes Improvement by Fine Surface Polishing

2004 · P. Godignon, R. Perez, et al. · MRS Proceedings · 5

Precise Control of Al Incorporation during CVD Growth of SiC Epilayers by Using Hydrogen Chloride

2022 · Marcin Zielinski, Marc Bussel, et al. · Materials science forum · 3

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1300°C Annealing of 1×1020 Al+ Ion Implanted 3C-SiC

2019 · Roberta Nipoti, Maria Concetta Canino, et al. · Materials science forum · 3

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Phase transition by Mg doping of N‐face polarity GaN

2005 · E. Sarigiannidou, E. Monroy, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 3

Direct Growth of High Quality GaN by Plasma Assisted Molecular Beam Epitaxy on 4H-SiC Substrates

2004 · F. Fossard, J. Brault, et al. · Materials science forum · 2

Novel Carbon Treatment to Create an Oriented 3C-SiC Seed on Silicon

2019 · Marcin Zielinski, Sylvain Monnoye, et al. · Materials science forum · 1

Regrowth of 3C-SiC on CMP Treated 3C-SiC/Si Epitaxial Layers

2005 · Hugues Mank, Catherine Moisson, et al. · Materials science forum · 1

Evaluation of Strain in 3C-SiC/Si Epiwafers from X-Ray Diffraction Measurements

2023 · Marcin Zielinski, Marc Bussel, et al. · Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum

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Electrical Scanning Probe Microscopy Investigation of Schottky and Metal-Oxide Junctions on Hetero-Epitaxial 3C-SiС on Silicon

2022 · Filippo Giannazzo, Patrick Fiorenza, et al. · Materials science forum

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Works count: 31

Citation count: 330

H-index: 10

I10-index: 11