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Ikuto Tsuyuzaki
Observed name:
I. Tsuyuzaki
Institution:
Waseda University
Observed institution:
Waseda University
OpenAlex ID:
A5028366827
Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors
2018
·
Nobutaka Oi
, Masafumi Inaba
, et al.
·
Scientific Reports
·
66
PDF
Over 1 A Operation of Vertical-Type Diamond MOSFETs
2024
·
Nobutaka Oi
, Satoshi Okubo
, et al.
·
IEEE Electron Device Letters
·
15
Single-crystalline boron-doped diamond superconducting quantum interference devices with regrowth-induced step edge structure
2019
·
Taisuke Kageura
, Masakuni Hideko
, et al.
·
Scientific Reports
·
14
PDF
Superconductivity in nano- and micro-patterned high quality single crystalline boron-doped diamond films
2018
·
Taisuke Kageura
, Masakuni Hideko
, et al.
·
Diamond and Related Materials
·
14
Crystal analysis of grain boundaries in boron-doped diamond superconducting quantum interference devices operating above liquid helium temperature
2021
·
Aoi Morishita
, Shotaro Amano
, et al.
·
Carbon
·
2
Boron-doped Diamond Superconducting Quantum Interference Devices Operating up to 10 K
2019
·
A. Morishita
, I. Tsuyuzaki
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
Superconducting Boron-doped Diamond Josephson Junction Operating above Liquid He Temperature, 4.2 K
2018
·
S. Amano
, T. Kageura
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
Superconducting Boron-doped Diamond Josephson Junction Capable of Operating above Liquid Helium Temperature
2018
·
Aoi Morishita
, Taisuke Kageura
, et al.
·
The Japan Society of Applied Physics
Enhancement of Superconducting Transition Temperature of (111) Boron Doped Diamond in Thin Film
2018
·
Shotaro Amano
, Masakuni Hideko
, et al.
·
The Japan Society of Applied Physics
Vertical-type 2DHG Diamond MOSFETs
2017
·
N. Oi
, T. Kudo
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
Boron-doped Diamond Superconducting Quantum Interference Devices with Two Step-Edge Josephson Junctions
2017
·
I. Tsuyuzaki
, T. Kageura
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
Characterization of Vertical 2DHG Diamond MOSFET with Blocking Layer formed by CVD
2017
·
Masayuki Iwataki
, Nobutaka Oi
, et al.
·
The Japan Society of Applied Physics
Boron-doped diamond Josephson junction by intermittent (111) single crystalline layer
2017
·
Shotaro Amano
, Taisuke Kageura
, et al.
·
The Japan Society of Applied Physics
[JSAP Young Scientist Award Speech] Operation Analysis of Vertical-type 2DHG Diamond MOSFETs and Improvement of Breakdown Characteristics
2017
·
Nobutaka Oi
, Takuya Kudo
, et al.
·
The Japan Society of Applied Physics
Influence of SiO 2 thin films formed on the hydrogen-terminated diamond surface on a two-dimensional-hole-gas layer
2017
·
Taichi Yabe
, Takuya Kudo
, et al.
·
The Japan Society of Applied Physics
improvement of vertical type 2DHG diamond FET
2017
·
Nobutaka Oi
, Takuya Kudo
, et al.
·
The Japan Society of Applied Physics
[JSAP Young Scientist Award Speech] Single crystalline diamond superconducting quantum interference devices
2017
·
Ikuto Tsuyuzaki
, Taisuke Kageura
, et al.
·
The Japan Society of Applied Physics
Boron-doped diamond superconducting quantum interference devices with regrowth-induced step edge structure Josephson junctions
2016
·
Ikuto Tsuyuzaki
, Taisuke Kageura
, et al.
·
The Japan Society of Applied Physics
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Works count:
18
Citation count:
111
H-index:
4
I10-index:
4
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