Author

Matthias Peter

Observed name: M. Peter

Observed institutions: Friedrich-Alexander-Universität Erlangen-Nürnberg, Fraunhofer Institute for Applied Solid State Physics, Osram Opto Semiconductors

OpenAlex ID: A5028760821

High-Power and High-Efficiency InGaN-Based Light Emitters

2009 · Ansgar Laubsch, Matthias Sabathil, et al. · IEEE Transactions on Electron Devices · 345

Wavelength‐dependent determination of the recombination rate coefficients in single‐quantum‐well GaInN/GaN light emitting diodes

2012 · Dario Schiavon, Michael Binder, et al. · physica status solidi (b) · 130

On the origin of IQE‐‘droop’ in InGaN LEDs

2009 · Ansgar Laubsch, Matthias Sabathil, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 119

New developments in green LEDs

2009 · Matthias Peter, Ansgar Laubsch, et al. · physica status solidi (a) · 92

Realization and modeling of a pseudomorphic (GaAs1−xSbx–InyGa1−yAs)/GaAs bilayer-quantum well

1995 · M. Peter, K. Winkler, et al. · Applied Physics Letters · 88

Band gaps and band offsets in strained GaAs1−ySby on InP grown by metalorganic chemical vapor deposition

1999 · M. Peter, N. Herres, et al. · Applied Physics Letters · 87

Light-emitting diodes and laser diodes based on a Ga1−xInxAs/GaAs1−ySby type II superlattice on InP substrate

1999 · M. Peter, R. Kiefer, et al. · Applied Physics Letters · 48

Visible GaN laser diodes: from lowest thresholds to highest power levels

2019 · Harald König, Muhammad Ali, et al. · Novel In-Plane Semiconductor Lasers · 32

Green ThinGaN power‐LED demonstrates 100 lm

2008 · M. Peter, A. Laubsch, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 32

Luminescence properties of thick InGaN quantum‐wells

2009 · Ansgar Laubsch, Werner Bergbauer, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 28

Optically pumped GaInN/GaN multiple quantum wells for the realization of efficient green light-emitting devices

2013 · Dario Schiavon, Michael Binder, et al. · Applied Physics Letters · 27

Status of high efficiency and high power ThinGaN®‐LED development

2009 · Johannes Baur, Frank Baumann, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 27

GaInN laser diodes from 440 to 530nm: a performance study on single-mode and multi-mode R&D designs

2017 · Uwe Strauss, Andre Somers, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 26

Lateral charge carrier diffusion in InGaN quantum wells

2012 · J. Danhof, H.‐M. Solowan, et al. · physica status solidi (b) · 22

Blue 450nm high power semiconductor continuous wave laser bars exceeding rollover output power of 80W

2018 · Harald König, Alfred Lell, et al. · High-Power Diode Laser Technology · 21

Green high‐power light sources using InGaN multi‐quantum‐well structures for full conversion

2011 · B. Galler, M. Sabathil, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 18

Epitaxial design of 475 nm InGaN laser diodes with reduced wavelength shift

2009 · Désirée Queren, Adrian Avramescu, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 18

Improved GaN layer morphology by hydride vapor phase epitaxy on misoriented Al2O3 wafers

2005 · Ferdinand Scholz, Peter Brückner, et al. · Applied Physics Letters · 16

High-power InGaN LEDs: present status and future prospects

2008 · B. Hahn, A. Weimar, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 15

Temperature‐dependent photoluminescence measurements on a sub‐micrometer length scale on green light emitting InGaN/GaN quantum wells

2010 · J. Danhof, C. Vierheilig, et al. · physica status solidi (b) · 14

Blue high power InGaN semiconductor laser diodes: Design optimization of laser bars and single emitters for best performance and reliability

2020 · Harald König, Sven Gerhard, et al. · High-Power Diode Laser Technology · 13

Interfacial intermixing and arsenic incorporation in thin InP barriers embedded in In0.53Ga0.47As

1998 · J. Wagner, M. Peter, et al. · Journal of Applied Physics · 12

Improved performance of 2-μm GaInAs strained quantum-well lasers on InP by increasing carrier confinement

2001 · D. Serries, M. Peter, et al. · IEEE Photonics Technology Letters · 11