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Zhiyou Guo

Observed names: Guo Zhi-You, Guo, Zhi-You, Mengxia Gao, Zhi-You Guo, Zhi-you Guo
ORCID: 0000-0001-5563-3719
Observed ORCID: 0000-0001-5563-3719
OpenAlex ID: A5028764542
Efficiency improvements in AlGaN-based deep ultraviolet light-emitting diodes using inverted-V-shaped graded Al composition electron blocking layer
2015 · Xuancong Fan, Huiqing Sun, et al. · Superlattices and Microstructures · 57
GaN-Based High-Response Frequency and High-Optical Power Matrix Micro-LED for Visible Light Communication
2020 · Yong Huang, Zhiyou Guo, et al. · IEEE Electron Device Letters · 53
Influence of Current Density and Capacitance on the Bandwidth of VLC LED
2018 · Yong Huang, Zhiyou Guo, et al. · IEEE Photonics Technology Letters · 34
Enhancing luminescence in all-inorganic perovskite surface plasmon light-emitting diode by incorporating Au-Ag alloy nanoparticle
2019 · Yaohua Zhang, Huiqing Sun, et al. · Optical Materials · 32
Study of AlGaN/GaN Vertical Superjunction HEMT for Improvement of Breakdown Voltage and Specific On-Resistance
2021 · Miao Zhang, Zhiyou Guo, et al. · IEEE Access · 29
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Enhancement of hole injection in deep ultraviolet light-emitting diodes using a serrated P-type layer
2018 · Yufei Hou, Zhiyou Guo · Optics Communications · 27
Theoretical study of Fe-doped p-type ZnO
2010 · Bei Deng, Zhiyou Guo, et al. · Applied Physics Letters · 25
Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage
2021 · Xiaoyu Xia, Zhiyou Guo, et al. · Micromachines · 20
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Improvement of AlGaN-based deep ultraviolet light-emitting diodes by using a graded AlGaN superlattice hole reservoir layer
2018 · Xin Wang, Hui-Qing Sun, et al. · Optical Materials · 19
AlGaN-Based Deep UV Communication LED With Superlattice Electron-Blocking Layer at 274 nm
2024 · Yong Huang, Yu Li, et al. · IEEE Photonics Technology Letters · 17
Uniform Illumination Realized by Large Viewing Angle of Gallium Nitride-Based Mini-LED Chip With Translucent Sublayer Pairs
2021 · Liang Xu, Chuang Chia Ming, et al. · IEEE Access · 16
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Study of Deep Ultraviolet Light-Emitting Diodes with a p-AlInN/AlGaN Superlattice Electron-Blocking Layer
2017 · Jing Huang, Zhiyou Guo, et al. · Journal of Electronic Materials · 16
Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double electron blocking layers
2016 · Cheng Zhang, Sun Hui-Qing, et al. · Chinese Physics B · 15
[INVITED] Special AlGaN graded superlattice hole and electron blocking layers improved performance of AlGaN-based ultraviolet light-emitting diodes
2018 · Xinyan Yi, Huiqing Sun, et al. · Optics & Laser Technology · 13
Performance improvement of AlGaN-based ultraviolet light-emitting diodes by amending inverted-Y-shaped barriers with alternate doped Si and Mg
2017 · Yufei Hou, Zhiyou Guo, et al. · Superlattices and Microstructures · 13
High efficiency improvements in AlGaN-based ultraviolet light-emitting diodes with specially designed AlGaN superlattice hole and electron blocking layers
2017 · Xinyan Yi, Huiqing Sun, et al. · Superlattices and Microstructures · 12
Performance Enhancement of Blue Light-Emitting Diodes With an Undoped AlGaN Electron-Blocking Layer in the Active Region
2015 · Zhuding Zhang, Huiqing Sun, et al. · Journal of Display Technology · 12
Enhanced performance of GaN-based light-emitting diodes with InGaN/GaN superlattice barriers
2014 · Jin-Xin Cai, Hui-Qing Sun, et al. · Chinese Physics B · 12
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Investigation of high threshold voltage E-mode AlGaN/GaN MIS-HEMT with triple barrier layer
2021 · Fan Xia, Huiqing Sun, et al. · Results in Physics · 11
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Luminescence of perovskite light-emitting diodes with quasi-core/shell structure enhanced by Al–TiO2–Ag Bimetallic Nanoparticle
2019 · Ha Su, Huiqing Sun, et al. · Superlattices and Microstructures · 11
NPDC structure double-channel N-polar E-mode GaN HEMTs: Innovations in enhancing RF and DC performance and mitigating trap effects
2024 · Longfei Yang, Huiqing Sun, et al. · Microelectronics Journal · 10
Analysis of RF performance of novel Sc-doped GaN high-electron-mobility transistors with air-bridge structure
2021 · Peng-lin Wang, Hui-qing Sun, et al. · Results in Physics · 10
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Performance enhancement of AlGaN-based UV-LEDs inserted with a pin-doped AlGaN layer between the active region and electron-blocking layer
2018 · Xin Wang, Hui-Qing Sun, et al. · Materials Science in Semiconductor Processing · 10
Optimization on the luminous efficiency in AlGaN-based ultraviolet light-emitting diodes by amendment of a superlattice hole reservoir layer
2016 · Xian Yang, Huiqing Sun, et al. · Superlattices and Microstructures · 10
Effect of Polarization Field and Nonradiative Recombination Lifetime on the Performance Improvement of Step Stage InGaN/GaN Multiple Quantum Well LEDs
2015 · Huan Zheng, Huiqing Sun, et al. · Journal of Display Technology · 10
Works count: 75
Citation count: 695
H-index: 13
I10-index: 28
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