Author

Motonobu Takeya

Observed name: M. Takeya

Observed institutions: Tohoku University, Sony (Japan)

OpenAlex ID: A5029457690

2004 · S. Tomiya, T. Hino, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 136

Recent progress in high-power blue-violet lasers

2003 · S. Uchida, M. Takeya, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 88

GaN-Based High Power Blue-Violet Laser Diodes

2001 · Tsuyoshi Tojyo, Takeharu Asano, et al. · Japanese Journal of Applied Physics · 84

Degradation in AlGaInN lasers

2003 · Motonobu Takeya, Takashi Mizuno, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 46

100-mW kink-free blue-violet laser diodes with low aspect ratio

2003 · T. Asano, T. Tojyo, et al. · IEEE Journal of Quantum Electronics · 46

High-power 400-nm-band AlGaInN-based laser diodes with low aspect ratio

2002 · T. Asano, M. Takeya, et al. · Applied Physics Letters · 46

GaN-based blue laser diodes

2001 · Takao Miyajima, Tsuyoshi Tojyo, et al. · Journal of Physics Condensed Matter · 45

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Littrow-type external-cavity blue laser for holographic data storage

2007 · Tomiji Tanaka, Kazuo Takahashi, et al. · Applied Optics · 44

High‐power GaN‐based semiconductor lasers

2004 · M. Ikeda, T. Mizuno, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 40

High-Power AlGaInN Laser Diodes with High Kink Level and Low Relative Intensity Noise

2002 · Tsuyoshi Tojyo, Shiro Uchida, et al. · Japanese Journal of Applied Physics · 39

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Defects in degraded GaN-based laser diodes

2003 · Shigetaka Tomiya, Shu Goto, et al. · physica status solidi (a) · 31

AlGaInN high-power lasers grown on an ELO-GaN layer

2000 · Motonobu Takeya, Katsunori Yanashima, et al. · Journal of Crystal Growth · 26

Novel Methods of p-type Activation in Mg-doped GaN

2001 · Motonobu Takeya, Masao Ikeda · Japanese Journal of Applied Physics · 23

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High-Power AlGaInN Lasers

2002 · M. Takeya, T. Tojyo, et al. · physica status solidi (a) · 14

Low‐Temperature Polycrystalline Silicon Deposition by Very High Frequency Sputtering Using Ar and H 2

1997 · Y. H. Jang, W. S. Park, et al. · Journal of The Electrochemical Society · 12

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Structure analysis of ELO‐GaN using a 2 × 4 μm2 micro‐beam X‐ray of an 8‐GeV storage ring

2003 · T. Miyajima, M. Takeya, et al. · physica status solidi (b) · 11

Novel Techniques for Stabilizing Transverse Mode in AlGaInN-Based Laser Diodes

2001 · S. Kijima, T. Tojyo, et al. · physica status solidi (a) · 7

Structural Defects in Mg-doped GaN and AlGaN grown by MOCVD

2002 · S. Tomiya, S. Goto, et al. · MRS Proceedings · 5

400-nm Band AlGaInN-Based High Power Laser Diodes

2001 · Takeharu Asano, Motonobu Takeya, et al. · MRS Proceedings · 4

Structural Defects related issues of GaN-based Laser Diodes

2004 · Shigetaka Tomiya, Motonobu Takeya, et al. · MRS Proceedings · 2

Plasma conditions for as-grown low temperature poly-Si formation on SiO2 substrate by sputtering and plasma enhanced chemical vapor deposition processes

1998 · M. Takeya, W. S. Park, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2

Growth of polycrystalline silicon at low temperature on hydrogenated macrocrystalline silicon(μ c-Si:H) seed layer

1997 · W. S. Park, Y. H. Jang, et al. · MRS Proceedings · 1

High-power blue-violet laser diodes on GaN substrates

2005 · T. Mizuno, M. Takeya, et al. · IEEE International Semiconductor Laser Conference (ISLC)

Recent progress in high-power blue-violet lasers

2003 · S. Uchida, M. Takeya, et al. · IEEE International Semiconductor Laser Conference (ISLC)

AlGaInN laser diodes grown on an ELO-GaN substrate vs. on a sapphire substrate

2002 · T. Asano, T. Tojyo, et al. · IEEE International Semiconductor Laser Conference (ISLC)

Works count: 25

Citation count: 752

H-index: 14

I10-index: 16