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Roberto Simola

Observed names: R. Simola, SIMOLA, Roberto
ORCID: 0009-0000-9111-6356
Observed ORCID: 0009-0000-9111-6356
OpenAlex ID: A5029525516
Push the flash floating gate memories toward the future low energy application
2012 · V. Della Marca, G. Just, et al. · Solid-State Electronics · 15
Dopant Diffusion during Amorphous Silicon Crystallization
2007 · Alain Portavoce, Roberto Simola, et al. · Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum · 11
First stage of CoSi2 formation during a solid-state reaction
2014 · R. Delattre, O. Thomas, et al. · Journal of Applied Physics · 10
Atom Redistribution during co-Doped Amorphous Silicon Crystallization
2009 · Alain Portavoce, Dominique Mangelinck, et al. · Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum · 9
Decreasing reaction rate at the end of silicidation: In-situ CoSi2 XRD study and modeling
2013 · R. Delattre, R. Simola, et al. · Microelectronic Engineering · 5
Laser‐Induced Crystallization and Amorphization of Ge‐Rich GST Thin Films Monitored In Situ with Synchrotron X‐Ray Diffraction
2025 · Thomas Fernandes, Philipp Hans, et al. · physica status solidi (RRL) - Rapid Research Letters · 4
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Crystallization kinetics from Ge-rich Ge–Sb–Te thin films: Influence of thickness
2023 · Philipp Hans, Cristian Mocuta, et al. · Journal of Applied Physics · 4
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An In Situ Synchrotron X‐Ray Diffraction Study on the Influence of Hydrogen on the Crystallization of Ge‐Rich Ge2Sb2Te5
2022 · Philipp Hans, Cristian Mocuta, et al. · physica status solidi (RRL) - Rapid Research Letters · 4
Experimental study to push the Flash floating gate memories toward low energy applications
2011 · V. Della Marca, A. Regnier, et al. · International Semiconductor Device Research Symposium · 4
Thermal Disturbance 3D TCAD Simulation Study in Phase Change Memory Device
2022 · Roberto Simola, Paul Devoge, et al. · International Workshop on Thermal Investigations of ICs and Systems · 3
EEPROM endurance degradation at different temperatures: State of the art TCAD simulation
2022 · Franck Matteo, Karine Coulié, et al. · Microelectronics Reliability · 3
CoSi2 ultra-thin layer formation kinetics and texture from X-ray diffraction
2012 · R. Delattre, R. Simola, et al. · Thin Solid Films · 3
1T-NOR Flash memory after endurance degradation: An advanced TCAD simulation
2022 · F. Matteo, R. Simola, et al. · Microelectronics Reliability · 2
Simulation of state of the art EEPROM programming window closure during endurance degradation
2021 · Franck Matteo, Roberto Simola, et al. · International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS) · 2
Intermediate Resistance and Capacitance States in Ge‐Rich GeSbTe Phase‐Change Memory
2026 · Adrien Delpoux, Sijia Ran, et al. · physica status solidi (RRL) - Rapid Research Letters · 1
Investigation of Phase Segregation Dynamics in Ge‐Rich GST Thin Films by In Situ X‐Ray Fluorescence Mapping
2024 · Thomas Fernandes, Michael Texier, et al. · physica status solidi (RRL) - Rapid Research Letters · 1
Raman Thermometry Characterization of GeSbTe based Phase Change Materials
2022 · Akash Patil, Yannick Le-Friec, et al. · International Workshop on Thermal Investigations of ICs and Systems · 1
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Continuum simulation of solid phase epitaxial regrowth of amorphized silicon including most advanced physical interactions
2010 · Julien Delalleau, Ardechir Pakfar, et al. · physica status solidi (a) · 1
Dopant Diffusion during Amorphous Silicon Crystallization
2007 · Alain Portavoce, Roberto Simola, et al. · Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum · 1
Advanced TCAD Simulation of Tunnel Oxide Degradation for EEPROM Applications
2022 · F. Matteo, R. Simola, et al. · IEEE International Conference on Dielectrics (ICD)
Investigating the crystallization behaviour of Ge-rich GST PCMs with in situ synchrotron XRD
2021 · Philipp Hans, Christophe Guichet, et al. · Acta Crystallographica Section A Foundations and Advances
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In-situ study and modeling of the decreasing reaction rate at the end of CoSi2 formation
2011 · R. Delattre, R. Simola, et al. · IEEE International Interconnect Technology Conference (IITC)
Redistribution de dopants dans le silicium polycristallin : contribution aux mémoires non volatiles EEPROM
2007 · Roberto Simola
Boron Redistribution During Crystallization of Phosphorus-Doped Amorphous Silicon
2006 · R. Simola, D. Mangelinck, et al. · AIP conference proceedings
Works count: 25
Citation count: 84
H-index: 5
I10-index: 3
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