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Xiaolan Yan
Observed names:
Xiao-Lan Yan,
Yan, Xiaolan
Institutions:
Eastern Institute of Technology,
Chinese Academy of Sciences,
Shanghai Institute of Applied Physics,
Beijing Computational Science Research Center,
Eastern Institute of Technology, Ningbo
Observed institutions:
Eastern Institute of Technology,
Xiamen University,
Chinese Academy of Sciences,
Fudan University,
Shanghai Institute of Applied Physics,
Beijing Computational Science Research Center,
Eastern Institute of Technology, Ningbo
show all 7
ORCID:
0000-0003-1916-7305
Observed ORCID:
0000-0003-1916-7305
OpenAlex ID:
A5029564227
First-principles study of electronic and diffusion properties of intrinsic defects in 4H-SiC
2020
·
Xiaolan Yan
, Pei Li
, et al.
·
Journal of Applied Physics
·
62
Suppressing non-radiative recombination in metal halide perovskite solar cells by synergistic effect of ferroelasticity
2023
·
Wei Qin
, Wajid Ali
, et al.
·
Nature Communications
·
60
PDF
Synthesis of ZnO/Si Hierarchical Nanowire Arrays for Photocatalyst Application
2017
·
Dingguo Li
, Xiaolan Yan
, et al.
·
Nanoscale Research Letters
·
36
PDF
Temperature effect on charge-state transition levels of defects in semiconductors
2022
·
Shuang Qiao
, Yu-Ning Wu
, et al.
·
Physical review. B./Physical review. B
·
32
PDF
Hierarchical ZnO/Si nanowire arrays as an effective substrate for surface-enhanced Raman scattering application
2018
·
Shengli Huang
, Bing He
, et al.
·
Sensors and Actuators B Chemical
·
30
Universal Theory and Basic Rules of Strain-Dependent Doping Behaviors in Semiconductors
2021
·
Xiaolan Yan
, Pei Li
, et al.
·
Chinese Physics Letters
·
22
PDF
Relating Gain Degradation to Defects Production in Neutron-Irradiated 4H-SiC Transistors
2021
·
Peng Dong
, Xiaolan Yan
, et al.
·
IEEE Transactions on Nuclear Science
·
14
A comparable study of defect diffusion and recombination in Si and GaN
2022
·
Xiang-Ru Han
, Yang Li
, et al.
·
Journal of Applied Physics
·
10
Overcoming Asymmetric Carrier Injection in III-Nitride Light-Emitting Diodes through Defect Engineering
2025
·
Yuxin Yang
, Zhiming Shi
, et al.
·
Physical Review Letters
·
5
Mechanism for self-compensation in heavily carbon doped GaN
2023
·
Zhaohua Shen
, Xuelin Yang
, et al.
·
AIP Advances
·
5
Identification of carbon location in p-type GaN: Synchrotron x-ray absorption spectroscopy and theory
2022
·
Huayang Huang
, Xiaolan Yan
, et al.
·
Applied Physics Letters
·
4
Carrier Capture Dynamics of Deep-Level Defects in Neutron-Irradiated Si With Improved Intracascade Potential
2022
·
Jun Liu
, Pengdi Li
, et al.
·
IEEE Transactions on Nuclear Science
·
4
Electronic and doping properties of hexagonal silicon carbide with stacking faults induced cubic inclusions
2021
·
Pei Li
, Xiaolan Yan
, et al.
·
Journal of Applied Physics
·
4
Epitaxial growth and intrinsic nature of molybdenum disulfide on graphite
2017
·
Peichao Zhang
, Yimei Fang
, et al.
·
Applied Physics Express
·
4
Multidimensional defect identification of semiconductors in nonequilibrium
2025
·
Jun Liu
, Yang Gao
, et al.
·
Nature Communications
·
3
PDF
Wide-Band Gap Binary Semiconductor P3N5 with Highly Anisotropic Optical Linearity and Nonlinearity
2024
·
Shihang Li
, Xiaolan Yan
, et al.
·
Inorganic Chemistry
·
3
Utilizing the luminescent properties of hexagonal boron nitride for thermal neutron detection
2025
·
Yan Cao
, Jingrun Liu
, et al.
·
Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment
Fundamental Rules of Doping Control in Semiconductors via Strain Engineering
2020
·
Xiaolan Yan
, Su‐Huai Wei
, et al.
·
arXiv (Cornell University)
Additional file 1: Figure S1. of Synthesis of ZnO/Si Hierarchical Nanowire Arrays for Photocatalyst Application
2017
·
Li, Dingguo
, Yan, Xiaolan
, et al.
·
Figshare
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Works count:
19
Citation count:
298
H-index:
8
I10-index:
8
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