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Paul Brabant

Observed names: P. Brabant, Paul D. Brabant
ORCID: 0000-0002-3609-194X
Observed ORCID: 0000-0002-3609-194X
OpenAlex ID: A5029594704
TdI18: Process integration of the ferroelectric memory FETs (FEMFETs) for ndro ferram
1992 · D. R. Lampe, D. A. Adams, et al. · Ferroelectrics · 52
Gas phase particle formation and elimination on Si (100) in low temperature reduced pressure chemical vapor deposition silicon-based epitaxial layers
2011 · Manabu Shinriki, Keith Chung, et al. · Thin Solid Films · 18
Ultra-low resistance n+GaN contacts for GaN HEMT applications using MOCVD selective area epitaxy in N2 carrier gas
2022 · Jizhong Li, Paul Brabant, et al. · AIP Advances · 10
High strain embedded-SiGe via low temperature reduced pressure chemical vapor deposition
2011 · Hong He, Paul Brabant, et al. · Thin Solid Films · 10
Hydrogen termination for extended queue times for low temperature epitaxy
2008 · P. Brabant, J. Ferrara, et al. · Applied Surface Science · 9
Throughput Considerations for In-Situ Doped Embedded Silicon Carbon Stressor Selectively Grown into Recessed Source Drain Areas of NMOS Devices
2008 · Matthias Bauer, Yangting Zhang, et al. · ECS Transactions · 8
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X-band SiGe power HBT's
2002 · R. Strong, A. Agarwal, et al. · IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) · 6
Modeling and Model Reduction for Control and Optimization of Epitaxial Growth in a Commercial Rapid Thermal Chemical Vapor Deposition Reactor
1998 · A. Newman, P. S. Krishnaprasad, et al. · 6
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Achieving a SiGe HBT epitaxial emitter with novel low thermal budget technique
2003 · Paul Brabant, Jianqing Wen, et al. · Applied Surface Science · 4
Yield and Scaling Improvements in Next-Generation 2.5 THz SLCFET Devices to Enable Ultra-wideband DC-110GHz Switch MMICs
2021 · Jerome T. Mlack, Nick Edwards, et al. · IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) · 3
Moisture requirements to reduce interfacial sub-oxides and lower hydrogen pre-bake temperatures for RPCVD Si epitaxy
2013 · Paul D. Brabant, Manabu Shinriki, et al. · Journal of Crystal Growth · 3
Effect of Carrier Gas on Silicon Doped GaN Epilayer Characteristics
2023 · Jizhong Li, Paul Brabant, et al. · Journal of Electronic Materials · 2
Gas Source Depletion Study of High-Order Silanes of Silicon-Based Epitaxial Layers Grown with RPCVD and Low Temperatures
2012 · Keith H. Chung, Paul Brabant, et al. · ECS Transactions · 1
A novel technique for effectively determining SiGe film growth rates
2005 · P. Brabant, Jianqing Wen, et al. · IEEE International Conference on Solid-State and Integrated Circuit Technology · 1
Quantification of Dopant Profiles in SiGe HBT Devices
2018 · Eric J. Jones, Jonathan Poplawsky, et al. · IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Gas Source Depletion Study of High-Order Silanes of Silicon-Based Epitaxial Layers Grown with RPCVD and Low Temperatures
2012 · Keith H. Chung, Paul Brabant, et al. · ECS Meeting Abstracts
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Thermal budget reduction and throughput enhancement for CMOS Epi stressors via wet clean interface contamination evaluation and control
2011 · Paul Brabant, Keith Chung, et al. · ASMC proceedings
Throughput Considerations for In-Situ Doped Embedded Silicon Carbon Stressor Selectively Grown into Recessed Source Drain Areas of NMOS Devices
2008 · Matthias Bauer, Yangting Zhang, et al. · ECS Meeting Abstracts
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Works count: 18
Citation count: 133
H-index: 6
I10-index: 4
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