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Raghvendra Sahai Saxena

Observed names: R S Saxena, R Saxena, R. S. Saxena, R. Saxena, R.S. Saxena, Raghvendra S. Saxena, Raghvendra Sahai SAXENA
Observed institutions: University of Delhi, Hewlett-Packard (United States), Defence Research and Development Organisation, Solid State Physics Laboratory, Institute of Electrical and Electronics Engineers, Ministry of Defence, Varian Medical Systems (United States), Indian Institute of Technology Delhi, University of California, Berkeley
ORCID: 0000-0002-6129-7771
Observed ORCID: 0000-0002-6129-7771
OpenAlex ID: A5030151443
Uncooled Infrared Microbolometer Arrays and their Characterisation Techniques
2009 · R. Bhan, R. Saxena, et al. · Defence Science Journal · 107
Nanotube Tunneling FET With a Core Source for Ultrasteep Subthreshold Swing: A Simulation Study
2019 · Gaurav Musalgaonkar, Shubham Sahay, et al. · IEEE Transactions on Electron Devices · 75
A new discrete circuit for readout of resistive sensor arrays
2008 · R.S. Saxena, R.K. Bhan, et al. · Sensors and Actuators A Physical · 61
A Line Tunneling Field-Effect Transistor Based on Misaligned Core–Shell Gate Architecture in Emerging Nanotube FETs
2019 · Gaurav Musalgaonkar, Shubham Sahay, et al. · IEEE Transactions on Electron Devices · 57
Virtual Ground Technique for Crosstalk Suppression in Networked Resistive Sensors
2010 · Raghvendra Sahai Saxena, R. K. Bhan, et al. · IEEE Sensors Journal · 56
Analysis of Crosstalk in Networked Arrays of Resistive Sensors
2010 · Raghvendra Sahai Saxena, Navneet Kaur Saini, et al. · IEEE Sensors Journal · 47
A Stepped Oxide Hetero-Material Gate Trench Power MOSFET for Improved Performance
2009 · Raghvendra S. Saxena, M. Jagadesh Kumar · IEEE Transactions on Electron Devices · 46
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Dual-Material-Gate Technique for Enhanced Transconductance and Breakdown Voltage of Trench Power MOSFETs
2009 · Raghvendra S. Saxena, M. Jagadesh Kumar · IEEE Transactions on Electron Devices · 41
OMVPE growth of InGaAsP materials for long wavelength detectors and emitters
1986 · R. Saxena, V. Sardi, et al. · Journal of Crystal Growth · 32
Effect of La doping on dielectric properties of BiFe0.95Mn0.05O3 multiferroics
2014 · Aparna Saxena, Prachi Sharma, et al. · Ceramics International · 31
Study of performance degradation in Titanium microbolometer IR detectors due to elevated heating
2011 · Raghvendra Sahai Saxena, R.K. Bhan, et al. · Infrared Physics & Technology · 29
Polysilicon Spacer Gate Technique to Reduce Gate Charge of a Trench Power MOSFET
2011 · Raghvendra Sahai Saxena, M. Jagadesh Kumar · IEEE Transactions on Electron Devices · 26
A New Strained-Silicon Channel Trench-Gate Power MOSFET: Design and Analysis
2008 · Raghvendra S. Saxena, M. Jagadesh Kumar · IEEE Transactions on Electron Devices · 25
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Characterization of area arrays of microbolometer-based un-cooled IR detectors without using ROIC
2007 · R.S. Saxena, R.K. Bhan, et al. · Sensors and Actuators A Physical · 24
A Novel Test Structure for Process Control Monitor for Un-Cooled Bolometer Area Array Detector Technology
2006 · Raghvendra Sahai Saxena, R. K. Bhan, et al. · JSTS Journal of Semiconductor Technology and Science · 23
An Impact Ionization MOSFET With Reduced Breakdown Voltage Based on Back-Gate Misalignment
2018 · Gaurav Musalgaonkar, Shubham Sahay, et al. · IEEE Transactions on Electron Devices · 21
A review of nanoindentation and related cathodoluminescence studies on semiconductor materials
2022 · Hemant Kumar Sharma, Rajesh Kumar Sharma, et al. · Journal of Materials Science Materials in Electronics · 18
PSPICE circuit simulation of microbolometer infrared detectors with noise sources
2012 · Raghvendra Sahai Saxena, Arun Panwar, et al. · Infrared Physics & Technology · 16
Effect of Excessive Bias Heating on a Titanium Microbolometer Infrared Detector
2008 · R. S. Saxena, R. K. Bhan, et al. · IEEE Sensors Journal · 16
A sub-circuit model of a microbolometer IR detector and its experimental validation
2011 · Raghvendra Sahai Saxena, Arun Panwar, et al. · Sensors and Actuators A Physical · 15
Reducing Readout Complexity of Large Resistive Sensor Arrays
2008 · R. S. Saxena, R. K. Bhan, et al. · IEEE Sensors Journal · 15
Dielectric dispersion near the morphotropic phase boundary of 0.64PMN-0.36PT ceramics
2022 · Aparna Saxena, Abid Hussain, et al. · Ceramics International · 12
CMOS Implementation of Time Delay Integration (TDI) for Imaging Applications: A Brief Review
2019 · Sushil Kumar Semwal, Raghvendra Sahai Saxena · IETE Technical Review · 12
A New LDMOSFET with Tunneling Junction for Improved On-State Performance
2012 · Nitin Goyal, Raghvendra Sahai Saxena · IEEE Electron Device Letters · 11
Improved high resistivity ZnS films on HgCdTe for passivation of infrared devices
2010 · R.K. Bhan, V. Srivastava, et al. · Infrared Physics & Technology · 11
Works count: 76
Citation count: 955
H-index: 17
I10-index: 27
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