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A.E. Abdikarimov

Observed names: A. Abdikarimov, A. E. Abdikarimov, Azamat Abdikarimov, А.Е. Абдикаримов, А.Э. Абдикаримов
ORCID: 0000-0003-1220-7482
Observed ORCID: 0000-0003-1220-7482
OpenAlex ID: A5030723280
Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes
2017 · A.E. Atamuratov, A. Abdikarimov, et al. · Nanosystems Physics Chemistry Mathematics · 7
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The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET
2018 · A. E. Abdikarimov, A. Yusupov, et al. · Technical Physics Letters · 6
Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET
2014 · A. Abdikarimov, G. Indalecio, et al. · International Workshop on Computational Electronics · 6
The effect of geometrical sizes on efficiency of vertical silicon tunnel junction solar cell for high solar concentration
2022 · A. E. Atamuratov, B.Q. Jumaboyev, et al. · International Conference on Information Science and Communications Technologies (ICISCT) · 3
Temperature-dependent dark I–V transport and barrier inhomogeneity in VTE-grown CdTe/Si heterojunction
2026 · I.B. Sapaev, S.O. Sadullaev, et al. · Results in Physics · 2
The Influence of a Single Charged Interface Trap on the Subthreshold Drain Current in FinFETs with Different Fin Shapes
2020 · A. E. Abdikarimov · Technical Physics Letters · 2
Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate
2017 · A.E. Atamuratov, M. Khalilloev, et al. · Nanosystems Physics Chemistry Mathematics · 2
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The Effect of Height on the Efficiency of Vertical Silicon Tunnel Junction Solar Cell for High Solar Concentration
2023 · A.E. Atamuratov, B.Q. Jumaboyev, et al. · Spanish Conference on Electron Devices · 1
Влияние формы плавника и толщины скрытого оксидного слоя на DIBL-эффект в FinFET-транзисторе, изготовленном по технологии "кремний на изоляторе"
2018 · А.Э. Абдикаримов, А. Юсупов, et al. · Письма в журнал технической физики · 1
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Impact of the gate oxide material composition on the self-heating and short channel effects in nanosheet field effect transistor
2026 · A. E. Atamuratov, D. R. Rajapov, et al. · Research Square
Temperature-Dependent Dark I–V Transport and Barrier Inhomogeneity in VTE-Grown CdTe/Si Heterojunctions
2026 · Ibrokhim B. Sapaev, S.O. Sadullaev, et al. · SSRN Electronic Journal
Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet
2025 · Atabek Atamuratov, Ibroximjon Karimov, et al. · East European Journal of Physics
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Memristors: types, characteristics and prospects of use as the main element of the future artificial intelligence
2022 · A. Yusupov, A. E. Atamuratov, et al. · International Conference on Information Science and Communications Technologies (ICISCT)
Capacitance-Voltage Method for Detecting the local oxide trapped charge in SOI FinFET
2022 · A.E. Abdikarimov, M. Foziljonov, et al. · International Conference on Information Science and Communications Technologies (ICISCT)
Влияние единичного граничного ловушечного заряда на подпороговый ток стока FinFET-транзистора с различной формой канала
2020 · А.Е. Абдикаримов · Письма в журнал технической физики
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ВЛИЯНИЕ БОКОВОГО РАСШИРЕНИЯ ЗАТВОРА НА КОРОТКОКАНАЛЬНЫЕ ЭФФЕКТЫ В НАНОМЕТРОВОМ КНИ FinFET-ТРАНЗИСТОРЕ
2019 · А.Э. Абдикаримов, А. Юсупов, et al. · «Узбекский физический журнал»
Simulation study of short channel effects in low power FinFETs with different body shape and geometries
2018 · A.E. Abdikarimov, Z.A. Atamuratova, et al.
Intercapacitance Between Two Charges Located in the Different Environments
2018 · A.E. Abdikarimov, А. Yusupov, et al. · Central Asian Problems of Modern Science and Education
The lateral capacitance of nanometer MNOSFET with a single charge trapped in oxide layer or at SiO2 - SI3N4
2015 · A.E. Atamuratov, U.A. Aminov, et al. · Nanosystems Physics Chemistry Mathematics
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The lateral capacitance of nanometer mnosfet with a single charge trapped in oxide layeror at SiO2-Si3N4 interfaceat
2015 · E Atamuratov, U. A. Aminov, et al. · Nanosystems Physics Chemistry Mathematics
Works count: 20
Citation count: 30
H-index: 3
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