Author

Schubert Chu

Institution: Applied Materials (United States)

Observed institution: Applied Materials (United States)

OpenAlex ID: A5030969296

The effect of La2O3-incorporation in HfO2 dielectrics on Ge substrate by atomic layer deposition

2013 · Il-kwon Oh, Min-Kyu Kim, et al. · Applied Surface Science · 38

Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition

2011 · Woo-Hee Kim, Min-Kyu Kim, et al. · Journal of The Electrochemical Society · 36

Selective Epitaxial Si:P Film for nMOSFET Application: High Phosphorous Concentration and High Tensile Strain

2014 · Xuebin Li, Abhishek Dube, et al. · ECS Transactions · 30

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Significant Enhancement of the Dielectric Constant through the Doping of CeO 2 into HfO 2 by Atomic Layer Deposition

2014 · Woo‐Hee Kim, Min‐Kyu Kim, et al. · Journal of the American Ceramic Society · 21

Atomic layer deposition of CeO2/HfO2 gate dielectrics on Ge substrate

2014 · Wan Joo Maeng, Il-Kwon Oh, et al. · Applied Surface Science · 20

(Invited) Activation and Deactivation in Ultra-Highly Doped n-Type Epitaxy for nMOS Applications

2020 · Zhiyuan Ye, Miao-Chun Chen, et al. · ECS Transactions · 11

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Buried SiGe as a performance booster in n-channel FDSOI MOSFETs

2019 · Paul Clifton, Andreas Goebel, et al. · Solid-State Electronics · 4

Strain Relaxed Silicon Germanium Buffer Layers: From Growth to Integration Challenges

2016 · Abhishek Dube, Yi-Chiau Huang, et al. · ECS Transactions · 2

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Integrating Selective Epitaxy in Advanced Logic & Memory Devices

2008 · Satheesh Kuppurao, Yihwan Kim, et al. · ECS Transactions · 2

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(Invited) Activation and Deactivation in Ultra-Highly Doped n-Type Epitaxy for nMOS Applications

2020 · Zhiyuan Ye, Miao-Chun Chen, et al. · ECS Meeting Abstracts

Bulk n-channel MOSFETs with buried stressor at the 28 nm process node

2020 · Paul Clifton, Andreas Goebel, et al. · Solid-State Electronics

(Invited) Enabling Low Temperature and High Quality Epitaxial Films for Current and Future Nodes

2018 · Manish Hemkar, Errol Sanchez, et al. · ECS Meeting Abstracts

(Invited) Group IV Epitaxy Applications for Enabling Advanced Device Scaling

2016 · Benjamin P Colombeau, Matthias Bauer, et al. · ECS Meeting Abstracts

Strain Relaxed Silicon Germanium Buffer Layers: From Growth to Integration Challenges

2016 · Abhishek Dube, Yi-Chiau Huang, et al. · ECS Meeting Abstracts

(Invited) Group IV Epitaxy Applications for Enabling Advanced Device Scaling

2016 · Benjamin P Colombeau, Matthias Bauer, et al. · ECS Transactions

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Selective Epitaxial Si:P Film for nMOSFET Application: High Phosphorous Concentration and High Tensile Strain

2014 · Xuebin Li, Abhishek Dube, et al. · ECS Meeting Abstracts

Thermal chemical vapor deposition of epitaxial germanium tin alloys

2014 · Yihwan Kim, Yi-Chiau Huang, et al. · International Silicon-Germanium Technology and Device Meeting (ISTDM)

Integrating Selective Epitaxy in Advanced Logic & Memory Devices

2008 · Satheesh Kuppurao, Yihwan Kim, et al. · ECS Meeting Abstracts

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Opportunities and Challenges for Electroless Metallization in VLSI Processing.

2006 · Timothy Weidman, Arulkumar Shanmugasundram, et al. · ECS Meeting Abstracts

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Works count: 20

Citation count: 164

H-index: 6

I10-index: 6