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D. Bernklau

Observed name: Bernklau, D.
OpenAlex ID: A5031018697
Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content
2000 · M. Hetterich, M. D. Dawson, et al. · Applied Physics Letters · 217
High power CW operation of InGaAsN lasers at 1.3µm
1999 · A.Yu. Egorov, D. Bernklau, et al. · Electronics Letters · 114
Giant acoustoelectric effect in GaAs/LiNbO3 hybrids
1998 · M. Rotter, A. Wixforth, et al. · Applied Physics Letters · 91
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Growth of high quality InGaAsN heterostructures and their laser application
2001 · A.Yu. Egorov, D. Bernklau, et al. · Journal of Crystal Growth · 77
Optical investigations of GaInNAs/GaAs multi-quantum wells with low nitrogen content
2002 · H. D. Sun, M. Hetterich, et al. · Journal of Applied Physics · 38
Nonlinear acoustoelectric interactions in GaAs/LiNbO3 structures
1999 · M. Rotter, A. Wixforth, et al. · Applied Physics Letters · 29
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High performance resonant tunnelling structures on GaAs substrates
1990 · H. Riechert, D. Bernklau, et al. · Electronics Letters · 26
Emission dynamics of In0.2Ga0.8As/GaAs λ and 2λ microcavity lasers
1996 · P. Michler, M. Hilpert, et al. · Applied Physics Letters · 23
Self-Assembled InAs Quantum Dots in an InGaAsN Matrix on GaAs
2001 · A.Yu. Egorov, D. Bedarev, et al. · physica status solidi (b) · 16
Influence of carrier relaxation on the dynamics of stimulated emission in microcavity lasers
1997 · M. Hilpert, H. Klann, et al. · Applied Physics Letters · 11
GaN-based LEDs grown by molecular beam epitaxy
1998 · Robert Averbeck, A. Graber, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 5
MBE growth and post-growth annealing of GaAs-based resonant tunneling structures, viewed in relation to interface roughness
1991 · H. Riechert, D. Bernklau, et al. · Journal of Crystal Growth · 5
Comparison of GaInNAs/GaAs and strain-compensated InGaAs/GaAsP quantum wells for 1200-1300 nm diode lasers
2003 · M. Hetterich, M.D. Dawson, et al. · IEEE Lasers and Electro-Optics Society Annual Meeting (LEOS) · 3
Significantly enhanced SAW transmission in voltage tunable GaAs/LiNbO/sub 3/ hybrid devices
2002 · M. Rotter, W. Ruile, et al. · Proceedings/Proceedings - IEEE Ultrasonics Symposium · 2
Carrier mobilities in graded InxGa1−xAs/Al0.2Ga0.8As quantum wells for high electron mobility transistors
1996 · U. Strauß, D. Bernklau, et al. · Journal of Applied Physics · 2
Temperature dependence of the minimum V/III ratio for the growth of InxGa1-xAs
1993 · H. Riechert, R. Averbeck, et al. · Journal of Crystal Growth · 2
Quasi-monolithic GaAs/LiNbO/sub 3/-hybrids for acoustoelectric applications
2002 · M. Rotter, A. Wixforth, et al. · IEEE International Ultrasonics Symposium · 1
Quasi-monolithic GaAsLiNbO3-hybrids for acoustoelectric applications
1997 · M. Rotter, A. Wixforth, et al. · 1
MBE Growth of High Performance GaAs/GaAlAs and InGaAs/GaAlAs Double Barrier Quantum Well Structures for Resonant Tunneling Devices
1991 · H. Riechert, D. Bernklau, et al. · NATO ASI series. Series B : Physics · 1
Optical and Structural Properties of InGaAs/GaAs Heterostructures
1999 · A. Yu. Egorov, D. Bernklau, et al. · Defense Technical Information Center (DTIC)
Pump geometry for resonant and quasi-resonant optical excitation of microcavity lasers
1998 · M. Hofmann, F. Jahnke, et al. · Optics Letters
電圧同調可能GaAs/LiNbO 3 ハイブリッドデバイスにおけるSAW伝送の著しい向上
1998 · M. Rotter, W. Ruile, et al. · IEEE International Ultrasonics Symposium
Influence of Carrier Cooling on the Emission Dynamics of Semiconductor Microcavity Lasers
1997 · M. Hilpert, M. Hofmann, et al. · physica status solidi (b)
InGaAs/GaAs frequency tunable twin-guide quantum-well laser designed for steerable surface emission
1993 · Matthias Rosenberger, Anton Koeck, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
Works count: 27
Citation count: 665
H-index: 10
I10-index: 10
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