Author

D. V. Vasilyev

Observed names: D.V. Vasilyev, Dmitry Vasilyev, Д. В. Васильев, Д.В. Васильев

Institution: Research and Production Complex Technological Centre

Observed institutions: National Research University of Electronic Technology, Research and Production Complex Technological Centre

ORCID: 0000-0001-6568-5301

Observed ORCID: 0000-0001-6568-5301

OpenAlex ID: A5031143757

Current Sensor Based on Anisotropic Magnetoresistive Effect

2021 · Petr Belyakov, Vladimir Amelichev, et al. · IEEE Transactions on Magnetics · 8

Change in the Magnetoresistance of a Spin Tunnel Element upon Inhomogeneous Magnetization Reversal with the Formation of Domains

2022 · V. S. Shevtsov, V. V. Amelichev, et al. · Bulletin of the Russian Academy of Sciences Physics · 4

Magnetic Energy of Interaction between a Synthetic Antiferromagnet and a Free Layer of a Spin-Tunnel Element

2023 · O. P. Polyakov, P. A. Polyakov, et al. · Bulletin of the Russian Academy of Sciences Physics · 3

Main Design and Technological Features of MRAM

2020 · D.V. Vasilyev, V.V. Amelichev, et al. · Nano- i Mikrosistemnaya Tehnika · 3

Светодиодный магнитооптический эллипсометр с переключением ортогональных состояний поляризации

2016 · В. И. Ковалев, А. И. Руковишников, et al. · Instruments and Experimental Techniques · 3

Развитие технологии наноструктур со спин-туннельным магниторезистивным эффектом

2020 · В.В. Амеличев, А.А. Резнев, et al. · Nanoindustry Russia · 2

Influence of the Design Parameters on the Electrophysical Characteristics of the Anisotropic Magnetoresistive Transducers of the Magnetic Field with Barber Poles

2018 · D.A. Zhukov, M.A. Kupriyanova, et al. · Nano- i Mikrosistemnaya Tehnika · 2

High-Sensitivity Sensors Based on the Tunnel Magnetoresistive Effect: Review of Advances and Prospects for Biomedical Applications

2026 · A. A. Ostroverkhova, D. V. Vasilyev, et al. · Nanobiotechnology Reports

Model of Spin-Tunnel Junction Magnetization Reversal with Synthetic Antiferromagnet

2025 · D.V. Vasilyev, P.A. Polyakov, et al. · Nano- i Mikrosistemnaya Tehnika

Features of Magnetization Reversal in Magnetic Layers of a Synthetic Antiferromagnet in a Spin-Tunnel Element

2025 · D. V. Vasilyev, P. A. Polyakov, et al. · Bulletin of the Russian Academy of Sciences Physics

Высокочувствительный Преобразователь Магнитного Поля На Основе Спин-туннельных Магниторезистивных Наноструктур С Синтетическим Антиферромагнетиком

2025 · Д.В. Васильев, А.Н. Сауров, et al. · Nanoindustry Russia

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Features of magnetization reversal in magnetic layers of a synthetic antiferromagnet in a spin-tunnel element

2025 · D.V. Vasilyev, P.A. Polyakov, et al. · Известия Российской академии наук Серия физическая / Bulletin of the Russian Academy of Sciences Physics

Features of electric current flow in periodic structures of magnetic sensors with resistance anisotropy

2025 · V.S. Shevtsov, V.V. Amelichev, et al. · Известия Российской академии наук Серия физическая / Bulletin of the Russian Academy of Sciences Physics

Compensation of Magnetostatic Interaction between Magnetic Layers in a Spin Tunnel Element

2024 · D. V. Vasilyev, O. P. Polyakov, et al. · Bulletin of the Russian Academy of Sciences Physics

Investigation of Test Cells of Nonvolatile Magnetoresistive Memory

2023 · E. E. Makarova, V. V. Amelichev, et al. · Nanobiotechnology Reports

Magnetic energy of interaction between a synthetic antiferromagnet and a free layer of a spin-tunnel element

2023 · O. P. Polyakov, P. A. Polyakov, et al. · Известия Российской академии наук Серия физическая

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Study of Synthetic Antiferromagnetic Nanostructures Based on CoFeB/Ru/CoFe

2023 · Scientific-manufacturing Complex ", D.V. Vasilyev, et al. · Nano- i Mikrosistemnaya Tehnika

Research of Test Cells of Power-independent Magnetoresistive Memory

2022 · E.E. Makarova, V.V. Amelichev, et al. · Nano- i Mikrosistemnaya Tehnika

Трехосевой Магниторезистивный Преобразователь Слабого Магнитного Поля